FDMC7664 - аналоги, даташиты, параметры транзистора

FDMC7664 Datasheet (PDF)

..1. Size:205K fairchild semi
fdmc7664.pdf pdf_icon

June 2010FDMC7664N-Channel PowerTrench MOSFET 30 V, 18.8 A, 4.2 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 4.2 m at VGS = 10 V, ID = 18.8 ASemiconductors advanced Power Trench process that has Max rDS(on) = 5.5 m at VGS = 4.5 V, ID = 16.1 Abeen especially tailored to minimize the on-state resistance. This de

7.1. Size:283K fairchild semi
fdmc7660dc.pdf pdf_icon

January 2011FDMC7660DCN-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 2.2 mFeatures General Description Dual CoolTM Top Side Cooling PQFN packageThis N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 2.2 m at VGS = 10 V, ID = 22 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 3.3 m at

7.2. Size:371K fairchild semi
fdmc7660s.pdf pdf_icon

December 2009FDMC7660SN-Channel Power Trench SyncFET 30 V, 20 A, 2.2 mFeatures General Description Max rDS(on) = 2.2 m at VGS = 10 V, ID = 20 A The FDMC7660S has been designed to minimize losses in power conversion applications. Advancements in both silicon Max rDS(on) = 2.95 m at VGS = 4.5 V, ID = 18 Aand package technologies have been combined to offer the Hi

7.3. Size:250K fairchild semi
fdmc7660.pdf pdf_icon

December 2009FDMC7660N-Channel PowerTrench MOSFET 30 V, 20 A, 2.2 m Features General Description Max rDS(on) = 2.2 m at VGS = 10 V, ID = 20 AThis N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has Max rDS(on) = 3.3 m at VGS = 4.5 V, ID = 18 Abeen especially tailored to minimize the on-state resistance. This High perfo

Другие MOSFET... FDMC7570S , FDMC7572S , FDMC7660 , STS2307 , STS2306E , FDMC7660DC , FDMC7660S , STS2306A , 60N06 , STS2306 , FDMC7672 , STS2305A , FDMC7672S , STS2305 , FDMC7678 , STS2302A , FDMC7680 .