Справочник MOSFET. HM60N20

 

HM60N20 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HM60N20
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 285 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 60 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 130 nC
   trⓘ - Время нарастания: 20 ns
   Cossⓘ - Выходная емкость: 950 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.032 Ohm
   Тип корпуса: TO220

 Аналог (замена) для HM60N20

 

 

HM60N20 Datasheet (PDF)

 ..1. Size:561K  cn hmsemi
hm60n20.pdf

HM60N20
HM60N20

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =60A RDS(ON)

 0.1. Size:740K  cn hmsemi
hm60n20d.pdf

HM60N20
HM60N20

HM60N20DN-Channel Enhancement Mode Power MOSFET Description The HM60N20D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =60A RDS(ON)

 9.1. Size:892K  cn hmsemi
hm60n08.pdf

HM60N20
HM60N20

HM60N08N-Channel Enhancement Mode Power MOSFET Description The HM60N08 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =60A RDS(ON)

 9.2. Size:622K  cn hmsemi
hm60n06k.pdf

HM60N20
HM60N20

HM60N06KDescription The HM60N06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =60A RDS(ON)

 9.3. Size:575K  cn hmsemi
hm60n02.pdf

HM60N20
HM60N20

HM60N02Description The HM60N02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =60A RDS(ON)

 9.4. Size:634K  cn hmsemi
hm60n04.pdf

HM60N20
HM60N20

HM60N04N-Channel Enhancement Mode Power MOSFET Description The HM60N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =60A RDS(ON)

 9.5. Size:1263K  cn hmsemi
hm60n05k.pdf

HM60N20
HM60N20

HM60N05KN-Channel Enhancement Mode Power MOSFET Description The HM60N05K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 50V,ID =60A RDS(ON)

 9.6. Size:563K  cn hmsemi
hm60n10d.pdf

HM60N20
HM60N20

HM60N10DDescription The HM60N10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS = 100V,ID =60A RDS(ON)

 9.7. Size:598K  cn hmsemi
hm60n75k.pdf

HM60N20
HM60N20

HM60N75K Product Summary General Description The HM60N75K uses advanced trench technology and BVDSS typ. 84 V design to provide excellent RDS(ON) with low gate RDS(ON) typ. 6.8 m charge. It can be used in a wide variety of applications. max. 8.5 m ID 60 A Features VDS=75VID=60A@ VGS=10V 100% UIS TESTED! RDS(ON)

 9.8. Size:1063K  cn hmsemi
hm60n05.pdf

HM60N20
HM60N20

HM60N05N-Channel Enhancement Mode Power MOSFET Description The HM60N05 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 50V,ID =60A RDS(ON)

 9.9. Size:504K  cn hmsemi
hm60n06.pdf

HM60N20
HM60N20

HM60N06Description The HM60N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =60A RDS(ON)

 9.10. Size:564K  cn hmsemi
hm60n03d.pdf

HM60N20
HM60N20

HM60N03DN-Channel Enhancement Mode Power MOSFET Description The HM60N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =60A RDS(ON)

 9.11. Size:677K  cn hmsemi
hm60n03.pdf

HM60N20
HM60N20

HM60N03N-Channel Enhancement Mode Power MOSFET Description The HM60N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =60A RDS(ON)

 9.12. Size:646K  cn hmsemi
hm60n04k.pdf

HM60N20
HM60N20

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =60A RDS(ON)

 9.13. Size:729K  cn hmsemi
hm60n03k.pdf

HM60N20
HM60N20

HM60N03K N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM60N03K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =30V,ID =60A RDS(ON)

 9.14. Size:492K  cn hmsemi
hm60n02k.pdf

HM60N20
HM60N20

HM60N02KDescription The HM60N02K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =60A RDS(ON)

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