FDMC7678 datasheet, подбор замены

 ..1. Size:330K  fairchild semi
 fdmc7678.pdf 

June 2011 FDMC7678 N-Channel Power Trench MOSFET 30 V, 19.5 A, 5.3 m Features General Description Max rDS(on) = 5.3 m at VGS = 10 V, ID = 17.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 6.8 m at VGS = 4.5 V, ID = 15.0 A been especially tailored to minimize the on-state resistance. This High

 7.1. Size:208K  fairchild semi
 fdmc7672.pdf 

March 2010 FDMC7672 N-Channel Power Trench MOSFET 30 V, 16.9 A, 5.7 m Features General Description Max rDS(on) = 5.7 m at VGS = 10 V, ID = 16.9 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 7.0 m at VGS = 4.5 V, ID = 15.0 A been especially tailored to minimize the on-state resistance. This High p

 7.2. Size:343K  fairchild semi
 fdmc7672s.pdf 

September 2010 FDMC7672S N-Channel Power Trench SyncFETTM 30 V, 14.8 A, 6.0 m Features General Description This FDMC7672S is produced using Fairchild Semiconductor s Max rDS(on) = 6.0 m at VGS = 10 V, ID = 14.8 A advanced Power Trench process that has been especially Max rDS(on) = 7.1 m at VGS = 4.5 V, ID = 12.4 A tailored to minimize the on-state resistance. This d

 8.1. Size:283K  fairchild semi
 fdmc7660dc.pdf 

January 2011 FDMC7660DC N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 2.2 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 2.2 m at VGS = 10 V, ID = 22 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 3.3 m at

 8.2. Size:272K  fairchild semi
 fdmc7696.pdf 

November 2011 FDMC7696 N-Channel PowerTrench MOSFET 30 V, 12 A, 11.5 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 11.5 m at VGS = 10 V, ID = 12 A Semiconductor s advanced Power Trench process that has Max rDS(on) = 14.5 m at VGS = 4.5 V, ID = 10 A been especially tailored to minimize the on-state resistance.This device

 8.3. Size:205K  fairchild semi
 fdmc7664.pdf 

June 2010 FDMC7664 N-Channel PowerTrench MOSFET 30 V, 18.8 A, 4.2 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 4.2 m at VGS = 10 V, ID = 18.8 A Semiconductor s advanced Power Trench process that has Max rDS(on) = 5.5 m at VGS = 4.5 V, ID = 16.1 A been especially tailored to minimize the on-state resistance. This de

 8.4. Size:371K  fairchild semi
 fdmc7660s.pdf 

December 2009 FDMC7660S N-Channel Power Trench SyncFET 30 V, 20 A, 2.2 m Features General Description Max rDS(on) = 2.2 m at VGS = 10 V, ID = 20 A The FDMC7660S has been designed to minimize losses in power conversion applications. Advancements in both silicon Max rDS(on) = 2.95 m at VGS = 4.5 V, ID = 18 A and package technologies have been combined to offer the Hi

 8.5. Size:328K  fairchild semi
 fdmc7692s.pdf 

September 2010 FDMC7692S N-Channel Power Trench SyncFETTM 30 V, 12.5 A, 9.3 m Features General Description This FDMC7692S is produced using Fairchild Semiconductor s Max rDS(on) = 9.3 m at VGS = 10 V, ID = 12.5 A advanced Power Trench process that has been especially Max rDS(on) = 13.6 m at VGS = 4.5 V, ID = 10.4 A tailored to minimize the on-state resistance. This

 8.6. Size:250K  fairchild semi
 fdmc7660.pdf 

December 2009 FDMC7660 N-Channel PowerTrench MOSFET 30 V, 20 A, 2.2 m Features General Description Max rDS(on) = 2.2 m at VGS = 10 V, ID = 20 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has Max rDS(on) = 3.3 m at VGS = 4.5 V, ID = 18 A been especially tailored to minimize the on-state resistance. This High perfo

 8.7. Size:207K  fairchild semi
 fdmc7680.pdf 

March 2010 FDMC7680 N-Channel Power Trench MOSFET 30 V, 14.8 A, 7.2 m Features General Description Max rDS(on) = 7.2 m at VGS = 10 V, ID = 14.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 9.5 m at VGS = 4.5 V, ID = 12.4 A been especially tailored to minimize the on-state resistance. This High p

 8.8. Size:319K  fairchild semi
 fdmc7692.pdf 

September 2010 FDMC7692 N-Channel Power Trench MOSFET 30 V, 13.3 A, 8.5 m Features General Description Max rDS(on) = 8.5 m at VGS = 10 V, ID = 13.3 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 11.5 m at VGS = 4.5 V, ID = 10.6 A been especially tailored to minimize the on-state resistance. This H

 8.9. Size:469K  onsemi
 fdmc7692.pdf 

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