Справочник MOSFET. HM70N80A

 

HM70N80A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HM70N80A
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 145 W
   Предельно допустимое напряжение сток-исток |Uds|: 70 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 25 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 80 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 75 nC
   Время нарастания (tr): 14 ns
   Выходная емкость (Cd): 350 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0058 Ohm
   Тип корпуса: TO220

 Аналог (замена) для HM70N80A

 

 

HM70N80A Datasheet (PDF)

 ..1. Size:575K  cn hmsemi
hm70n80a.pdf

HM70N80A
HM70N80A

HM70N80AN-Channel Trench Power MOSFETGeneral DescriptionGeneral DescriptionGeneral DescriptionGeneral DescriptionThe HM70N80A is N-channel MOS Field Effect Transistordesigned for high current switching applications. Rugged EAScapability and ultra low R is suitable for PWM, loadDS(ON)switching especially for E-Bike controller applications.FeaturesFeaturesFeaturesFeat

 7.1. Size:728K  cn hmsemi
hm70n80.pdf

HM70N80A
HM70N80A

68VDS25VGS80A(ID) N-Channel Enhancement Mode MOSFET Features Pin Description VDSS=68VVGSS=25VID=80A RDS(ON)=10.8m(Max.)@VGS=10V Avalanche Rated Reliable and Rugged Advanced trench process technology High Density Cell Design Fo

 8.1. Size:421K  cn hmsemi
hm70n88.pdf

HM70N80A
HM70N80A

N-Channel Trench Power MOSFETGeneral DescriptionGeneral DescriptionGeneral DescriptionGeneral DescriptionThe is N-channel MOS Field Effect Transistordesigned for high current switching applications. Rugged EAScapability and ultra low R is suitable for PWM, loadDS(ON)switching especially for E-Bike controller applications.FeaturesFeaturesFeaturesFeature

 9.1. Size:583K  cn hmsemi
hm70n78.pdf

HM70N80A
HM70N80A

HM70N78N-Channel Trench Power MOSFETGeneral DescriptionGeneral DescriptionGeneral DescriptionGeneral DescriptionThe HM70N78 is N-channel MOS Field Effect Transistordesigned for high current switching applications. Rugged EAScapability and ultra low R is suitable for PWM, loadDS(ON)switching especially for E-Bike controller applications.FeaturesFeaturesFeaturesFeature

 9.2. Size:510K  cn hmsemi
hm70n75.pdf

HM70N80A
HM70N80A

HM70N75N-Channel Trench Power MOSFETGeneral DescriptionGeneral DescriptionGeneral DescriptionGeneral DescriptionThe HM70N75 is N-channel MOS Field Effect Transistordesigned for high current switching applications. Rugged EAScapability and ultra low R is suitable for PWM, loadDS(ON)switching especially for E-Bike controller applications.FeaturesFeaturesFeaturesFeatur

 9.3. Size:397K  cn hmsemi
hm70n20t.pdf

HM70N80A
HM70N80A

General Description VDSS 200 V , the silicon N-channel Enhanced ID 70 A PD(TC=25) 367 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 29.5 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturiz

 9.4. Size:675K  cn hmsemi
hm70n90d.pdf

HM70N80A
HM70N80A

N-Channel Trench Power MOSFETGeneral DescriptionGeneral DescriptionGeneral DescriptionGeneral DescriptionThe is N-channel MOS Field Effect Transistordesigned for high current switching applications. Rugged EAScapability and ultra low R is suitable for PWM, loadDS(ON)switching especially for E-Bike controller applications.FeaturesFeaturesFeaturesFeatu

 9.5. Size:652K  cn hmsemi
hm70n75d.pdf

HM70N80A
HM70N80A

HM70N75DN-Channel Trench Power MOSFETGeneral DescriptionGeneral DescriptionGeneral DescriptionGeneral DescriptionThe HM70N75D is N-channel MOS Field Effect Transistordesigned for high current switching applications. Rugged EAScapability and ultra low R is suitable for PWM, loadDS(ON)switching especially for E-Bike controller applications.FeaturesFeaturesFeaturesFeat

 9.6. Size:518K  cn hmsemi
hm70n15.pdf

HM70N80A
HM70N80A

N-Channel Enhancement Mode Power MOSFET Description The HM70N15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =70A Schematic diagram RDS(ON)

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top