Справочник MOSFET. HM70N80A

 

HM70N80A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HM70N80A
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 145 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 70 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 14 ns
   Cossⓘ - Выходная емкость: 350 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0058 Ohm
   Тип корпуса: TO220

 Аналог (замена) для HM70N80A

 

 

HM70N80A Datasheet (PDF)

 ..1. Size:575K  cn hmsemi
 hm70n80a.pdf

HM70N80A HM70N80A

HM70N80AN-Channel Trench Power MOSFETGeneral DescriptionGeneral DescriptionGeneral DescriptionGeneral DescriptionThe HM70N80A is N-channel MOS Field Effect Transistordesigned for high current switching applications. Rugged EAScapability and ultra low R is suitable for PWM, loadDS(ON)switching especially for E-Bike controller applications.FeaturesFeaturesFeaturesFeat

 7.1. Size:728K  cn hmsemi
 hm70n80.pdf

HM70N80A HM70N80A

68VDS25VGS80A(ID) N-Channel Enhancement Mode MOSFET Features Pin Description VDSS=68VVGSS=25VID=80A RDS(ON)=10.8m(Max.)@VGS=10V Avalanche Rated Reliable and Rugged Advanced trench process technology High Density Cell Design Fo

 8.1. Size:421K  cn hmsemi
 hm70n88.pdf

HM70N80A HM70N80A

N-Channel Trench Power MOSFETGeneral DescriptionGeneral DescriptionGeneral DescriptionGeneral DescriptionThe is N-channel MOS Field Effect Transistordesigned for high current switching applications. Rugged EAScapability and ultra low R is suitable for PWM, loadDS(ON)switching especially for E-Bike controller applications.FeaturesFeaturesFeaturesFeature

 9.1. Size:583K  cn hmsemi
 hm70n78.pdf

HM70N80A HM70N80A

HM70N78N-Channel Trench Power MOSFETGeneral DescriptionGeneral DescriptionGeneral DescriptionGeneral DescriptionThe HM70N78 is N-channel MOS Field Effect Transistordesigned for high current switching applications. Rugged EAScapability and ultra low R is suitable for PWM, loadDS(ON)switching especially for E-Bike controller applications.FeaturesFeaturesFeaturesFeature

 9.2. Size:510K  cn hmsemi
 hm70n75.pdf

HM70N80A HM70N80A

HM70N75N-Channel Trench Power MOSFETGeneral DescriptionGeneral DescriptionGeneral DescriptionGeneral DescriptionThe HM70N75 is N-channel MOS Field Effect Transistordesigned for high current switching applications. Rugged EAScapability and ultra low R is suitable for PWM, loadDS(ON)switching especially for E-Bike controller applications.FeaturesFeaturesFeaturesFeatur

 9.3. Size:397K  cn hmsemi
 hm70n20t.pdf

HM70N80A HM70N80A

General Description VDSS 200 V , the silicon N-channel Enhanced ID 70 A PD(TC=25) 367 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 29.5 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturiz

 9.4. Size:675K  cn hmsemi
 hm70n90d.pdf

HM70N80A HM70N80A

N-Channel Trench Power MOSFETGeneral DescriptionGeneral DescriptionGeneral DescriptionGeneral DescriptionThe is N-channel MOS Field Effect Transistordesigned for high current switching applications. Rugged EAScapability and ultra low R is suitable for PWM, loadDS(ON)switching especially for E-Bike controller applications.FeaturesFeaturesFeaturesFeatu

 9.5. Size:652K  cn hmsemi
 hm70n75d.pdf

HM70N80A HM70N80A

HM70N75DN-Channel Trench Power MOSFETGeneral DescriptionGeneral DescriptionGeneral DescriptionGeneral DescriptionThe HM70N75D is N-channel MOS Field Effect Transistordesigned for high current switching applications. Rugged EAScapability and ultra low R is suitable for PWM, loadDS(ON)switching especially for E-Bike controller applications.FeaturesFeaturesFeaturesFeat

 9.6. Size:518K  cn hmsemi
 hm70n15.pdf

HM70N80A HM70N80A

N-Channel Enhancement Mode Power MOSFET Description The HM70N15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =70A Schematic diagram RDS(ON)

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