Справочник MOSFET. HM75N06K

 

HM75N06K MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HM75N06K
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 110 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 75 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 50 nC
   trⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 237 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0115 Ohm
   Тип корпуса: TO252

 Аналог (замена) для HM75N06K

 

 

HM75N06K Datasheet (PDF)

 ..1. Size:519K  cn hmsemi
 hm75n06k.pdf

HM75N06K HM75N06K

HM75N06KN-Channel Enhancement Mode Power MOSFET Description The HM75N06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =75A RDS(ON)

 7.1. Size:569K  cn hmsemi
 hm75n06.pdf

HM75N06K HM75N06K

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =75A RDS(ON)

 8.1. Size:611K  cn hmsemi
 hm75n07k.pdf

HM75N06K HM75N06K

HM75N07KDescription The HM75N07K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =70V,ID =75A RDS(ON)

 9.1. Size:678K  cn hmsemi
 hm75n75.pdf

HM75N06K HM75N06K

HM75N N-Channel Enhancement Mode Power MOSFET Product Summary General Description The HM75N uses advanced trench technology and BVDSS typ. 75 design to provide excellent RDS(ON) with low gate charge. RDS(ON) typ. 7.0 mThis device is suitable for use in PWM, load switching and max. 9.0 m general purpose applications. ID 75 A Features VDS=75VID= A@

 9.2. Size:595K  cn hmsemi
 hm75n80.pdf

HM75N06K HM75N06K

HM75N80 N-Channel Enhancement Mode Power MOSFET Product Summary General Description The HM75N80 uses advanced trench technology and BVDSS typ. 84 V design to provide excellent RDS(ON) with low gate charge. RDS(ON) typ. 6.5 m This device is suitable for use in PWM, load switching and max. 8.0 m general purpose applications. ID 80 A Features VDS=75VID=80

 9.3. Size:477K  cn hmsemi
 hm75n20.pdf

HM75N06K HM75N06K

HM75N20N-Channel Enhancement Mode Power MOSFET Description The HM75N20 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features VDSS =200V,ID =75A Schematic diagram RDS(ON)

 9.4. Size:500K  cn hmsemi
 hm75n80d.pdf

HM75N06K HM75N06K

HM75N80DN-Channel Enhancement Mode Power MOSFET Description The HM75N80D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS = 75V,ID =80A Schematic diagram RDS(ON)

 9.5. Size:870K  cn hmsemi
 hm75n75k.pdf

HM75N06K HM75N06K

HM75N N-Channel Enhancement Mode Power MOSFET Product Summary General Description The HM75N uses advanced trench technology and BVDSS typ. 75 design to provide excellent RDS(ON) with low gate charge. RDS(ON) typ. 7.0 mThis device is suitable for use in PWM, load switching and max. 9.0 m general purpose applications. ID 75 A Features VDS=75VID= A

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History: 2N5245 | VBZM3710

 

 
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