HM75N80 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: HM75N80
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 170 W
Предельно допустимое напряжение сток-исток |Uds|: 75 V
Предельно допустимое напряжение затвор-исток |Ugs|: 25 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 80 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 100 nC
Время нарастания (tr): 11.8 ns
Выходная емкость (Cd): 340 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.008 Ohm
Тип корпуса: TO220
HM75N80 Datasheet (PDF)
hm75n80.pdf
HM75N80 N-Channel Enhancement Mode Power MOSFET Product Summary General Description The HM75N80 uses advanced trench technology and BVDSS typ. 84 V design to provide excellent RDS(ON) with low gate charge. RDS(ON) typ. 6.5 m This device is suitable for use in PWM, load switching and max. 8.0 m general purpose applications. ID 80 A Features VDS=75VID=80
hm75n80d.pdf
HM75N80DN-Channel Enhancement Mode Power MOSFET Description The HM75N80D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS = 75V,ID =80A Schematic diagram RDS(ON)
hm75n75.pdf
HM75N N-Channel Enhancement Mode Power MOSFET Product Summary General Description The HM75N uses advanced trench technology and BVDSS typ. 75 design to provide excellent RDS(ON) with low gate charge. RDS(ON) typ. 7.0 mThis device is suitable for use in PWM, load switching and max. 9.0 m general purpose applications. ID 75 A Features VDS=75VID= A@
hm75n06.pdf
N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =75A RDS(ON)
hm75n20.pdf
HM75N20N-Channel Enhancement Mode Power MOSFET Description The HM75N20 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features VDSS =200V,ID =75A Schematic diagram RDS(ON)
hm75n07k.pdf
HM75N07KDescription The HM75N07K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =70V,ID =75A RDS(ON)
hm75n06k.pdf
HM75N06KN-Channel Enhancement Mode Power MOSFET Description The HM75N06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =75A RDS(ON)
hm75n75k.pdf
HM75N N-Channel Enhancement Mode Power MOSFET Product Summary General Description The HM75N uses advanced trench technology and BVDSS typ. 75 design to provide excellent RDS(ON) with low gate charge. RDS(ON) typ. 7.0 mThis device is suitable for use in PWM, load switching and max. 9.0 m general purpose applications. ID 75 A Features VDS=75VID= A
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: CS48N80 | HRP130N06K
