Справочник MOSFET. HM7N60I

 

HM7N60I MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HM7N60I
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 48 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 29 nC
   trⓘ - Время нарастания: 50 ns
   Cossⓘ - Выходная емкость: 110 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.2 Ohm
   Тип корпуса: TO251

 Аналог (замена) для HM7N60I

 

 

HM7N60I Datasheet (PDF)

 ..1. Size:666K  cn hmsemi
 hm7n60k hm7n60i.pdf

HM7N60I HM7N60I

HM7N60K / HM7N60IHM7N60K / HM7N60I600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 7.5A, 600V, RDS(on) = 1.20 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 29nC)This advanced technology has been especially tailored to High ruggednessminimize on-state resistance, provide superior switchin

 8.1. Size:324K  cn hmsemi
 hm7n60 hm7n60f.pdf

HM7N60I HM7N60I

HM7N60 / HM7N60F600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 7.5A, 600V, RDS(on) = 1.20 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 29nC)This advanced technology has been especially tailored to High ruggednessminimize on-state resistance, provide superior switching Fast switchin

 9.1. Size:501K  cn hmsemi
 hm7n65k hm7n65i.pdf

HM7N60I HM7N60I

HM7N65K / HM7N65I HM7N65K / HM7N65I 650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 7.0A, 650V, RDS(on) = 1.35 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 29nC)This advanced technology has been espe cially tailored to High ruggednessminimize o n-state r esistance, pr ovide superior sw

 9.2. Size:340K  cn hmsemi
 hm7n65 hm7n65f.pdf

HM7N60I HM7N60I

/ / 650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 7.0A, 650V, RDS(on) = 1.26 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 29nC)This advanced technology has been espe cially tailored to High ruggednessminimize o n-state r esistance, pr ovide superio

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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