HM7N60I - аналоги, даташиты, параметры транзистора

HM7N60I Datasheet (PDF)

..1. Size:666K cn hmsemi
hm7n60k hm7n60i.pdf pdf_icon

HM7N60K / HM7N60IHM7N60K / HM7N60I600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 7.5A, 600V, RDS(on) = 1.20 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 29nC)This advanced technology has been especially tailored to High ruggednessminimize on-state resistance, provide superior switchin

8.1. Size:324K cn hmsemi
hm7n60 hm7n60f.pdf pdf_icon

HM7N60 / HM7N60F600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 7.5A, 600V, RDS(on) = 1.20 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 29nC)This advanced technology has been especially tailored to High ruggednessminimize on-state resistance, provide superior switching Fast switchin

9.1. Size:501K cn hmsemi
hm7n65k hm7n65i.pdf pdf_icon

HM7N65K / HM7N65I HM7N65K / HM7N65I 650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 7.0A, 650V, RDS(on) = 1.35 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 29nC)This advanced technology has been espe cially tailored to High ruggednessminimize o n-state r esistance, pr ovide superior sw

9.2. Size:340K cn hmsemi
hm7n65 hm7n65f.pdf pdf_icon

/ / 650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 7.0A, 650V, RDS(on) = 1.26 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 29nC)This advanced technology has been espe cially tailored to High ruggednessminimize o n-state r esistance, pr ovide superio

Другие MOSFET... HM75N20 , HM75N75 , HM75N75K , HM75N80 , HM75N80D , HM7746K , HM7N60 , HM7N60F , IRFP450 , HM7N60K , HM7N65 , HM7N65F , HM7N65I , HM7N65K , HM7N80 , HM7N80D , HM7N80F .