HM7N60K - аналоги и даташиты транзистора

 

HM7N60K - Даташиты. Аналоги. Основные параметры


   Наименование производителя: HM7N60K
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 147 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 7.5 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 50 ns
   Cossⓘ - Выходная емкость: 110 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.2 Ohm
   Тип корпуса: TO252

 Аналог (замена) для HM7N60K

 

HM7N60K Datasheet (PDF)

 ..1. Size:666K  cn hmsemi
 hm7n60k hm7n60i.pdf pdf_icon

HM7N60K

HM7N60K / HM7N60I HM7N60K / HM7N60I 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 7.5A, 600V, RDS(on) = 1.20 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 29nC) This advanced technology has been especially tailored to High ruggedness minimize on-state resistance, provide superior switchin

 8.1. Size:324K  cn hmsemi
 hm7n60 hm7n60f.pdf pdf_icon

HM7N60K

HM7N60 / HM7N60F 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 7.5A, 600V, RDS(on) = 1.20 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 29nC) This advanced technology has been especially tailored to High ruggedness minimize on-state resistance, provide superior switching Fast switchin

 9.1. Size:501K  cn hmsemi
 hm7n65k hm7n65i.pdf pdf_icon

HM7N60K

HM7N65K / HM7N65I HM7N65K / HM7N65I 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 7.0A, 650V, RDS(on) = 1.35 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 29nC) This advanced technology has been espe cially tailored to High ruggedness minimize o n-state r esistance, pr ovide superior sw

 9.2. Size:340K  cn hmsemi
 hm7n65 hm7n65f.pdf pdf_icon

HM7N60K

/ / 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 7.0A, 650V, RDS(on) = 1.26 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 29nC) This advanced technology has been espe cially tailored to High ruggedness minimize o n-state r esistance, pr ovide superio

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... HM75N75 , HM75N75K , HM75N80 , HM75N80D , HM7746K , HM7N60 , HM7N60F , HM7N60I , AON7506 , HM7N65 , HM7N65F , HM7N65I , HM7N65K , HM7N80 , HM7N80D , HM7N80F , HM80N03 .

History: F7N60 | HM90N04D | PTP4N60 | CS3N65U | PSMN3R2-40YLD | IRF741FI

 

 
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