HM7N65F - аналоги, даташиты, параметры транзистора

HM7N65F Datasheet (PDF)

..1. Size:340K cn hmsemi
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/ / 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 7.0A, 650V, RDS(on) = 1.26 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 29nC) This advanced technology has been espe cially tailored to High ruggedness minimize o n-state r esistance, pr ovide superio

8.1. Size:501K cn hmsemi
hm7n65k hm7n65i.pdf pdf_icon

HM7N65K / HM7N65I HM7N65K / HM7N65I 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 7.0A, 650V, RDS(on) = 1.35 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 29nC) This advanced technology has been espe cially tailored to High ruggedness minimize o n-state r esistance, pr ovide superior sw

9.1. Size:666K cn hmsemi
hm7n60k hm7n60i.pdf pdf_icon

HM7N60K / HM7N60I HM7N60K / HM7N60I 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 7.5A, 600V, RDS(on) = 1.20 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 29nC) This advanced technology has been especially tailored to High ruggedness minimize on-state resistance, provide superior switchin

9.2. Size:324K cn hmsemi
hm7n60 hm7n60f.pdf pdf_icon

HM7N60 / HM7N60F 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 7.5A, 600V, RDS(on) = 1.20 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 29nC) This advanced technology has been especially tailored to High ruggedness minimize on-state resistance, provide superior switching Fast switchin

Другие MOSFET... HM75N80 , HM75N80D , HM7746K , HM7N60 , HM7N60F , HM7N60I , HM7N60K , HM7N65 , IRFP450 , HM7N65I , HM7N65K , HM7N80 , HM7N80D , HM7N80F , HM80N03 , HM80N03A , HM80N03I .