Справочник MOSFET. HM80N03K

 

HM80N03K MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HM80N03K
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 83 W
   Предельно допустимое напряжение сток-исток |Uds|: 30 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Максимально допустимый постоянный ток стока |Id|: 80 A
   Максимальная температура канала (Tj): 175 °C
   Время нарастания (tr): 15 ns
   Выходная емкость (Cd): 460 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0065 Ohm
   Тип корпуса: TO252

 Аналог (замена) для HM80N03K

 

 

HM80N03K Datasheet (PDF)

 ..1. Size:511K  cn hmsemi
hm80n03k.pdf

HM80N03K HM80N03K

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

 0.1. Size:674K  cn hmsemi
hm80n03ka.pdf

HM80N03K HM80N03K

HM80N03KAN-Channel Enhancement Mode Power MOSFET Description The HM80N03KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

 7.1. Size:602K  cn hmsemi
hm80n03i.pdf

HM80N03K HM80N03K

HM80N03IN-Channel Enhancement Mode Power MOSFET Description The HM80N03I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

 7.2. Size:583K  cn hmsemi
hm80n03.pdf

HM80N03K HM80N03K

HM80N03N-Channel Enhancement Mode Power MOSFET Description The HM80N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

 7.3. Size:841K  cn hmsemi
hm80n03a.pdf

HM80N03K HM80N03K

HM80N03AN-Channel Enhancement Mode Power MOSFET Description The HM80N03A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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