Справочник MOSFET. HM80N04

 

HM80N04 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HM80N04
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 90 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 50 nC
   trⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 750 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0065 Ohm
   Тип корпуса: TO220

 Аналог (замена) для HM80N04

 

 

HM80N04 Datasheet (PDF)

 ..1. Size:713K  cn hmsemi
 hm80n04.pdf

HM80N04 HM80N04

HM80N04N-Channel Enhancement Mode Power MOSFET Description The HM80N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =80A RDS(ON)

 0.1. Size:750K  cn hmsemi
 hm80n04k.pdf

HM80N04 HM80N04

HM80N04KN-Channel Enhancement Mode Power MOSFET Description The HM80N04K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =80A RDS(ON)

 8.1. Size:988K  cn hmsemi
 hm80n08k.pdf

HM80N04 HM80N04

HM80N08K N-Channel Enhancement Mode Power MOSFET Product Summary General Description The HM80N08K uses advanced trench technology and BVDSS typ. 80 V design to provide excellent RDS(ON) with low gate charge. RDS(ON) typ. 6.5 m This device is suitable for use in PWM, load switching and max. 8.0 m general purpose applications. ID 80 A Features VDS=80VID=

 8.2. Size:602K  cn hmsemi
 hm80n03i.pdf

HM80N04 HM80N04

HM80N03IN-Channel Enhancement Mode Power MOSFET Description The HM80N03I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

 8.3. Size:517K  cn hmsemi
 hm80n05k.pdf

HM80N04 HM80N04

HM80N05K N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =50V,ID =80A RDS(ON)

 8.4. Size:583K  cn hmsemi
 hm80n03.pdf

HM80N04 HM80N04

HM80N03N-Channel Enhancement Mode Power MOSFET Description The HM80N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

 8.5. Size:564K  cn hmsemi
 hm80n06k.pdf

HM80N04 HM80N04

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =80A RDS(ON)

 8.6. Size:511K  cn hmsemi
 hm80n03k.pdf

HM80N04 HM80N04

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

 8.7. Size:702K  cn hmsemi
 hm80n06ka.pdf

HM80N04 HM80N04

HM80N06KAN-Channel Enhancement Mode Power MOSFET Description The HM80N06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =80A RDS(ON)

 8.8. Size:674K  cn hmsemi
 hm80n03ka.pdf

HM80N04 HM80N04

HM80N03KAN-Channel Enhancement Mode Power MOSFET Description The HM80N03KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

 8.9. Size:841K  cn hmsemi
 hm80n03a.pdf

HM80N04 HM80N04

HM80N03AN-Channel Enhancement Mode Power MOSFET Description The HM80N03A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

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