HM9435A datasheet, подбор замены

 ..1. Size:572K  cn hmsemi
 hm9435a.pdf 

HM9435A P-Channel Enhancement Mode Power MOSFET D DESCRIPTION The HM9435A uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = -30V,ID = -5.1A RDS(ON)

 0.1. Size:110K  chenmko
 chm9435azgp.pdf 

CHENMKO ENTERPRISE CO.,LTD CHM9435AZGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 5.3 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-73/SOT-223 FEATURE * Small flat package. (SO-8 ) 1.65+0.15 * High density cell design for extremely low RDS(ON). 6.50+0.20 0.90+0.05 2.0+0

 0.2. Size:103K  chenmko
 chm9435ajgp.pdf 

CHENMKO ENTERPRISE CO.,LTD CHM9435AJGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 5.3 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * High density cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * Rugged and re

 8.1. Size:338K  chenmko
 chm9435gp.pdf 

CHENMKO ENTERPRISE CO.,LTD CHM9435GP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 5.3 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SOT-23 FEATURE * Small flat package. (SOT-23) * Advanced trench process technology * High Density Cell Design For Ultra Low On-Resistance (1) (

 8.2. Size:435K  cn hmsemi
 hm9435.pdf 

HM9435 P-Channel Enhancement Mode Power MOSFET D DESCRIPTION The HM9435 uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = -30V,ID = -5.1A RDS(ON)

 8.3. Size:676K  cn hmsemi
 hm9435b.pdf 

HM9435B P-Channel Enhancement Mode Power MOSFET DESCRIPTION D The HM9435B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = -20V,ID = -5A RDS(ON)