HMS11N60 datasheet, аналоги, основные параметры

Наименование производителя: HMS11N60  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 121 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 11 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 4 ns

Cossⓘ - Выходная емкость: 87 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.36 Ohm

Тип корпуса: TO220

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Аналог (замена) для HMS11N60

- подборⓘ MOSFET транзистора по параметрам

 

HMS11N60 даташит

 ..1. Size:737K  cn hmsemi
 hms11n60d hms11n60 hms11n60f.pdf pdf_icon

HMS11N60

HMS11N60D,HMS11N60,HMS11N60F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction 650 V VDS@Tjmax technology and design to provide excellent RDS(ON) with low RDS(ON)MAX 360 m gate charge. This super junction MOSFET fits the industry s ID 11 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial p

 0.1. Size:682K  cn hmsemi
 hms11n60k hms11n60i.pdf pdf_icon

HMS11N60

HMS11N60K/HMS11N60I HMS11N60K/HMS11N60I 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using H&M Semi s - 11A, 600V, RDS(on) typ. = 0.34 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 33nC) This advanced technology has been especially tailored - High ruggedness to minimize conduction loss, provide superior switching - Fast

 7.1. Size:683K  cn hmsemi
 hms11n65k hms11n65i.pdf pdf_icon

HMS11N60

HMS11N65K/HMS11N65I HMS11N65K/HMS11N65I 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using H&M Semi s - 11A, 650V, RDS(on) typ. = 0.38 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 33nC) This advanced technology has been especially tailored - High ruggedness to minimize conduction loss, provide superior switching - Fast

 7.2. Size:876K  cn hmsemi
 hms11n65i hms11n65k.pdf pdf_icon

HMS11N60

HMS11N65I / HMS11N65K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 11.5 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... HM9926, HM9926B, HM9N90F, HMS100N85D, HMS105N10D, HMS10N60I, HMS10N60K, HMS110N15, IRFP260N, HMS11N60D, HMS11N60F, HMS11N60I, HMS11N60K, HMS11N65, HMS11N65D, HMS11N65F, HMS11N65I