HMS11N70I datasheet, подбор замены

 ..1. Size:696K  cn hmsemi
 hms11n70d hms11n70k hms11n70f hms11n70b hms11n70 hms11n70i.pdf 

HMS11N70K,HMS11N70I,HMS11N70 HMS11N70F,HMS11N70D,HMS11N70B 700V N-Channel MOSFET Features General Description Features -11A, 700V, RDS(on) typ.= 0.4 @VGS = 10 V This Power MOSFET is produced using H&M Semi s Advanced Super-Junction technology. - Low gate charge ( typical 38nC) - 7.6A, 500V, RDS(on) typ. = 0.5 @VGS = 10 V This advanced technology has been especially tailored - High

 8.1. Size:737K  cn hmsemi
 hms11n60d hms11n60 hms11n60f.pdf 

HMS11N60D,HMS11N60,HMS11N60F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction 650 V VDS@Tjmax technology and design to provide excellent RDS(ON) with low RDS(ON)MAX 360 m gate charge. This super junction MOSFET fits the industry s ID 11 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial p

 8.2. Size:682K  cn hmsemi
 hms11n60k hms11n60i.pdf 

HMS11N60K/HMS11N60I HMS11N60K/HMS11N60I 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using H&M Semi s - 11A, 600V, RDS(on) typ. = 0.34 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 33nC) This advanced technology has been especially tailored - High ruggedness to minimize conduction loss, provide superior switching - Fast

 8.3. Size:683K  cn hmsemi
 hms11n65k hms11n65i.pdf 

HMS11N65K/HMS11N65I HMS11N65K/HMS11N65I 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using H&M Semi s - 11A, 650V, RDS(on) typ. = 0.38 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 33nC) This advanced technology has been especially tailored - High ruggedness to minimize conduction loss, provide superior switching - Fast

 8.4. Size:876K  cn hmsemi
 hms11n65i hms11n65k.pdf 

HMS11N65I / HMS11N65K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 11.5 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri

 8.5. Size:703K  cn hmsemi
 hms11n65 hms11n65d hms11n65f.pdf 

HMS11N65/ HMS11N65F/HMS11N65D General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON)MAX 360 m gate charge. This super junction MOSFET fits the industry s ID 11 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features New technology