HMS11N70I - Даташиты. Аналоги. Основные параметры
Наименование производителя: HMS11N70I
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 83 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 11 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 60 ns
Cossⓘ - Выходная емкость: 140 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.45 Ohm
Тип корпуса: TO251
Аналог (замена) для HMS11N70I
HMS11N70I Datasheet (PDF)
hms11n70d hms11n70k hms11n70f hms11n70b hms11n70 hms11n70i.pdf

HMS11N70K,HMS11N70I,HMS11N70HMS11N70F,HMS11N70D,HMS11N70B700V N-Channel MOSFETFeaturesGeneral DescriptionFeatures -11A, 700V, RDS(on) typ.= 0.4@VGS = 10 VThis Power MOSFET is produced using H&M SemisAdvanced Super-Junction technology. - Low gate charge ( typical 38nC) - 7.6A, 500V, RDS(on) typ. = 0.5@VGS = 10 VThis advanced technology has been especially tailored - High
hms11n60d hms11n60 hms11n60f.pdf

HMS11N60D,HMS11N60,HMS11N60FN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction 650 V VDS@Tjmaxtechnology and design to provide excellent RDS(ON) with low RDS(ON)MAX 360 m gate charge. This super junction MOSFET fits the industrys ID 11 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial p
hms11n60k hms11n60i.pdf

HMS11N60K/HMS11N60IHMS11N60K/HMS11N60I600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using H&M Semis - 11A, 600V, RDS(on) typ. = 0.34@VGS = 10 VAdvanced Super-Junction technology. - Low gate charge ( typical 33nC)This advanced technology has been especially tailored - High ruggednessto minimize conduction loss, provide superior switching - Fast
hms11n65k hms11n65i.pdf

HMS11N65K/HMS11N65IHMS11N65K/HMS11N65I650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using H&M Semis - 11A, 650V, RDS(on) typ. = 0.38@VGS = 10 VAdvanced Super-Junction technology. - Low gate charge ( typical 33nC)This advanced technology has been especially tailored - High ruggednessto minimize conduction loss, provide superior switching - Fast
Другие MOSFET... HMS11N65D , HMS11N65F , HMS11N65I , HMS11N65K , HMS11N70 , HMS11N70B , HMS11N70D , HMS11N70F , 2N7000 , HMS11N70K , HMS120N03D , HMS150N04D , HMS150N06D , HMS15N60 , HMS15N60A , HMS15N60D , HMS15N60F .
History: APT10090BLLG | SUP90N08-6M8P | SSF8205U
History: APT10090BLLG | SUP90N08-6M8P | SSF8205U



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