March 2011FDMC8026SN-Channel PowerTrench SyncFETTM 30 V, 21 A, 4.4 mFeatures General DescriptionThe FDMC8026S has been designed to minimize losses in Max rDS(on) = 4.4 m at VGS = 10 V, ID = 19 Apower conversion application. Advancements in both silicon and Max rDS(on) = 5.2 m at VGS = 4.5 V, ID = 17.5 Apackage technologies have been combined to offer the lowest rDS

July 2013FDMC8030Dual N-Channel Power Trench MOSFET 40 V, 12 A, 10 mFeatures General Description Max rDS(on) = 10 m at VGS = 10 V, ID = 12 AThis device includes two 40V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package. The package is Max rDS(on) = 14 m at VGS = 4.5 V, ID = 10 Aenhanced for exceptional thermal performance. Max rDS(on) = 28 m at VGS =

December 2014FDMC8010N-Channel PowerTrench MOSFET 30 V, 75 A, 1.3 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 1.3 m at VGS = 10 V, ID = 30 ASemiconductors advanced PowerTrench process that has Max rDS(on) = 1.8 m at VGS = 4.5 V, ID = 25 Abeen especially tailored to minimize the on-state resistance. This device is

April 2011FDMC8015LN-Channel Power Trench MOSFET 40 V, 18 A, 26 mFeatures General Description Max rDS(on) = 26 m at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench process that has Max rDS(on) = 36 m at VGS = 4.5 V, ID = 6 Abeen especially tailored to minimize the on-state resistance and Low Profile - 1 m

October 2013FDMC8032LDual N-Channel PowerTrench MOSFET 40 V, 7 A, 20 mFeatures General Description Max rDS(on) = 20 m at VGS = 10 V, ID = 7 AThis device includes two 40V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package. The package is Max rDS(on) = 27 m at VGS = 4.5 V, ID = 6 Aenhanced for exceptional thermal performance. Low Inductance Packaging Short

January 2015FDMC8010ET30N-Channel PowerTrench MOSFET30 V, 174 A, 1.3 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Extended TJ rating to 175CSemiconductors advanced PowerTrench process that has Max rDS(on) = 1.3 m at VGS = 10 V, ID = 30 Abeen especially tailored to minimize the on-state resistance. This device is well suited for

FDMC8010MOSFET N-Channel,POWERTRENCH)30 V, 75 A, 1.3 mWGeneral Descriptionwww.onsemi.comThis N-Channel MOSFET is produced using ON Semiconductorsadvanced POWERTRENCH process that has been especially tailoredPin 1Pin 1SSto minimize the on-state resistance. This device is well suited forSGapplications where ultra low rDS(on) is required in small spaces such as

FDMC8010DCMOSFET N-Channel, DUAL COOL) 33,POWERTRENCH)30 V, 157 A, 1.28 mWwww.onsemi.comGeneral DescriptionThis N-Channel MOSFET is produced using ON Semiconductors DDDDadvanced POWERTRENCH process. Advancements in both siliconand DUAL COOL package technologies have been combined to offerGSthe lowest rDS(on) while maintaining excellent switching performanceS