Справочник MOSFET. HMS150N06D

 

HMS150N06D MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HMS150N06D
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 200 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 150 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 70 nC
   trⓘ - Время нарастания: 11 ns
   Cossⓘ - Выходная емкость: 965 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0031 Ohm
   Тип корпуса: DFN5X6-8L

 Аналог (замена) для HMS150N06D

 

 

HMS150N06D Datasheet (PDF)

 ..1. Size:590K  cn hmsemi
hms150n06d.pdf

HMS150N06D
HMS150N06D

HMS150N06DN-Channel Super Trench Power MOSFET Description The HMS150N06D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous recti

 6.1. Size:553K  cn hmsemi
hms150n04d.pdf

HMS150N06D
HMS150N06D

N-Channel Super Trench Power MOSFET Description The HMS150N04D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rec

 9.1. Size:1235K  cn hmsemi
hms15n70d hms15n70k hms15n70f hms15n70b hms15n70 hms15n70i.pdf

HMS150N06D
HMS150N06D

HMS15N70K,HMS15N70I,HMS15N70HMS15N70F, HMS15N70D, HMS15N70B 700V N-Channel MOSFET FeaturesGeneral Description Features -15A, 700V, RDS(on) typ.= 0.3@VGS = 10 V This Power MOSFET is produced using H&M SemisAdvanced Super-Junction technology. - Low gate charge ( typical 43nC) - 7.6A, 500V, RDS(on) typ. = 0.5@VGS = 10 VThis advanced technology has been especially tailore

 9.2. Size:869K  cn hmsemi
hms15n65a.pdf

HMS150N06D
HMS150N06D

HMS15N65AN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 260 m gate charge. This super junction MOSFET fits the industrys ID 1 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features

 9.3. Size:578K  cn hmsemi
hms15n65i hms15n65k.pdf

HMS150N06D
HMS150N06D

HMS15N65I / HMS15N65KN-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 220 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 15 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial

 9.4. Size:989K  cn hmsemi
hms15n60 hms15n60f hms15n60d.pdf

HMS150N06D
HMS150N06D

HM 15N60D, HM 15N60, HM 15N60FN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction 600 V VDS@Tjmaxtechnology and design to provide excellent RDS(ON) with low RDS(ON)MAX 60 gate charge. This super junction MOSFET fits the industrys ID 1 A AC-DC SMPS requirements for PFC, AC/DC powerconversion, and

 9.5. Size:952K  cn hmsemi
hms15n65 hms15n65f hms15n65d.pdf

HMS150N06D
HMS150N06D

HMS15N65D, HMS15N65, HMS15N65FN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 260 m gate charge. This super junction MOSFET fits the industrys ID 15 A AC-DC SMPS requirements for PFC, AC/DC powerconversion, and industrial power ap

 9.6. Size:1023K  cn hmsemi
hms15n60a.pdf

HMS150N06D
HMS150N06D

HMS15N60AN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction 650 V VDS@Tjmaxtechnology and design to provide excellent RDS(ON) with low RDS(ON) MAX 0 m gate charge. This super junction MOSFET fits the industrys ID 1 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power appl

Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: 2SK2528-01

 

 
Back to Top