HMS15N70I MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: HMS15N70I
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 104 W
Предельно допустимое напряжение сток-исток |Uds|: 700 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4.5 V
Максимально допустимый постоянный ток стока |Id|: 15 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 43 nC
Время нарастания (tr): 11 ns
Выходная емкость (Cd): 340 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.34 Ohm
Тип корпуса: TO251
HMS15N70I Datasheet (PDF)
hms15n70d hms15n70k hms15n70f hms15n70b hms15n70 hms15n70i.pdf
HMS15N70K,HMS15N70I,HMS15N70HMS15N70F, HMS15N70D, HMS15N70B 700V N-Channel MOSFET FeaturesGeneral Description Features -15A, 700V, RDS(on) typ.= 0.3@VGS = 10 V This Power MOSFET is produced using H&M SemisAdvanced Super-Junction technology. - Low gate charge ( typical 43nC) - 7.6A, 500V, RDS(on) typ. = 0.5@VGS = 10 VThis advanced technology has been especially tailore
hms15n65a.pdf
HMS15N65AN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 260 m gate charge. This super junction MOSFET fits the industrys ID 1 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features
hms15n65i hms15n65k.pdf
HMS15N65I / HMS15N65KN-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 220 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 15 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial
hms15n60 hms15n60f hms15n60d.pdf
HM 15N60D, HM 15N60, HM 15N60FN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction 600 V VDS@Tjmaxtechnology and design to provide excellent RDS(ON) with low RDS(ON)MAX 60 gate charge. This super junction MOSFET fits the industrys ID 1 A AC-DC SMPS requirements for PFC, AC/DC powerconversion, and
hms15n65 hms15n65f hms15n65d.pdf
HMS15N65D, HMS15N65, HMS15N65FN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 260 m gate charge. This super junction MOSFET fits the industrys ID 15 A AC-DC SMPS requirements for PFC, AC/DC powerconversion, and industrial power ap
hms15n60a.pdf
HMS15N60AN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction 650 V VDS@Tjmaxtechnology and design to provide excellent RDS(ON) with low RDS(ON) MAX 0 m gate charge. This super junction MOSFET fits the industrys ID 1 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power appl
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: 4N80L-TM3-T
