HMS21N70A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: HMS21N70A
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 200 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 21 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 45 nC
trⓘ - Время нарастания: 6 ns
Cossⓘ - Выходная емкость: 150 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.19 Ohm
Тип корпуса: TO3P
HMS21N70A Datasheet (PDF)
hms21n70a.pdf
HMS21N70AN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 700 V technology and design to provide excellent RDS(ON) with low RDS(ON) TYP. 165 m gate charge. This super junction MOSFET fits the industrys ID 21 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Feature
hms21n70 hms21n70f.pdf
HMS21N70,HMS21N70FN-Channel Super Junction Power MOSFET II General Description The series of devices use advanced super junction VDS 700 V technology and design to provide excellent RDS(ON) with low RDS(ON) TYP. 165 m gate charge. This super junction MOSFET fits the industrys ID 21 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power application
hms21n60a.pdf
HMS21N60AN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction 650 V VDS@Tjmaxtechnology and design to provide excellent RDS(ON) with low RDS(ON) MAX 180 m gate charge. This super junction MOSFET fits the industrys ID 21 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. F
hms21n65a.pdf
HMS21N65AN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 180 m gate charge. This super junction MOSFET fits the industrys ID 21 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features
hms21n60 hms21n60f.pdf
HMS21N60,HMS21N60FN-Channel Super Junction Power MOSFET II General Description The series of devices use advanced super junction 650 V VDS@Tjmaxtechnology and design to provide excellent RDS(ON) with low RDS(ON) MAX 180 m gate charge. This super junction MOSFET fits the industrys ID 21 A AC-DC SMPS requirements for PFC, AC/DC powerconversion, and industrial power applica
hms21n65 hms21n65f.pdf
HMS21N65,HMS21N65FN-Channel Super Junction Power MOSFET II General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 180 m gate charge. This super junction MOSFET fits the industrys ID 21 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IPB042N10N3G | SL75N06Q
History: IPB042N10N3G | SL75N06Q
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918