HMS4030 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: HMS4030
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 105 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4.5 V
Максимально допустимый постоянный ток стока |Id|: 115 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 48 nC
Время нарастания (tr): 45 ns
Выходная емкость (Cd): 600 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0085 Ohm
Тип корпуса: TO220
HMS4030 Datasheet (PDF)
hms4030.pdf
HMS4030N-Channel Super Trench Power MOSFET Primary Version Description The HMS4030 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and sy
hms4030d.pdf
HMS4030DN-Channel Super Trench Power MOSFET Primary Version Description The HMS4030D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and
hms40n10d.pdf
HMS40N10DN-Channel Super Trench Power MOSFET Description The HMS40N10D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectifi
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