Справочник MOSFET. HMS80N10

 

HMS80N10 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: HMS80N10
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 125 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.2 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   Qg ⓘ - Общий заряд затвора: 65 nC
   tr ⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 354 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0085 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для HMS80N10

   - подбор ⓘ MOSFET транзистора по параметрам

 

HMS80N10 Datasheet (PDF)

 ..1. Size:995K  cn hmsemi
 hms80n10.pdf pdf_icon

HMS80N10

HMS80N10N-Channel Super Trench Power MOSFET Description The HMS80N10 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectificat

 0.1. Size:914K  cn hmsemi
 hms80n10ka.pdf pdf_icon

HMS80N10

HMS80N10KAN-Channel Super Trench Power MOSFET Description The HMS80N10AL uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectif

 0.2. Size:574K  cn hmsemi
 hms80n10al.pdf pdf_icon

HMS80N10

HMS80N10ALN-Channel Super Trench Power MOSFET Description The uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectif

 0.3. Size:725K  cn hmsemi
 hms80n10d.pdf pdf_icon

HMS80N10

HMS80N10DN-Channel Super Trench Power MOSFET Description The HMS80N10D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectific

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: D7N70 | FXN4613F

 

 
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