Аналоги HMS80N10. Основные параметры
Наименование производителя: HMS80N10
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 125 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 354 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0085 Ohm
Тип корпуса: TO220
Аналог (замена) для HMS80N10
HMS80N10 даташит
hms80n10.pdf
HMS80N10 N-Channel Super Trench Power MOSFET Description The HMS80N10 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectificat
hms80n10ka.pdf
HMS80N10KA N-Channel Super Trench Power MOSFET Description The HMS80N10AL uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectif
hms80n10al.pdf
HMS80N10AL N-Channel Super Trench Power MOSFET Description The uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectif
hms80n10d.pdf
HMS80N10D N-Channel Super Trench Power MOSFET Description The HMS80N10D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectific
Другие MOSFET... HMS60N10D , HMS65N03Q , HMS75N65T , HMS7N65I , HMS7N65K , HMS7N70I , HMS7N70K , HMS80N06D , AON6414A , HMS80N10AL , HMS80N10D , HMS80N10KA , HMS80N85 , HMS80N85D , HMS85N03ED , HMS85N95 , HMS85N95D .
History: JMSL1008PGQ | JMTG050P03A | JMTG100N06D | DH100P28B | JMTG100N04A | JMTG28DN10D | JMTG062N04D
History: JMSL1008PGQ | JMTG050P03A | JMTG100N06D | DH100P28B | JMTG100N04A | JMTG28DN10D | JMTG062N04D
Список транзисторов
Обновления
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