HMS80N10AL datasheet, аналоги, основные параметры

Наименование производителя: HMS80N10AL  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 125 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 78 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 10 ns

Cossⓘ - Выходная емкость: 354 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0085 Ohm

Тип корпуса: TO251S

  📄📄 Копировать 

Аналог (замена) для HMS80N10AL

- подборⓘ MOSFET транзистора по параметрам

 

HMS80N10AL даташит

 ..1. Size:574K  cn hmsemi
 hms80n10al.pdf pdf_icon

HMS80N10AL

HMS80N10AL N-Channel Super Trench Power MOSFET Description The uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectif

 6.1. Size:914K  cn hmsemi
 hms80n10ka.pdf pdf_icon

HMS80N10AL

HMS80N10KA N-Channel Super Trench Power MOSFET Description The HMS80N10AL uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectif

 6.2. Size:995K  cn hmsemi
 hms80n10.pdf pdf_icon

HMS80N10AL

HMS80N10 N-Channel Super Trench Power MOSFET Description The HMS80N10 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectificat

 6.3. Size:725K  cn hmsemi
 hms80n10d.pdf pdf_icon

HMS80N10AL

HMS80N10D N-Channel Super Trench Power MOSFET Description The HMS80N10D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectific

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... HMS65N03Q, HMS75N65T, HMS7N65I, HMS7N65K, HMS7N70I, HMS7N70K, HMS80N06D, HMS80N10, IRFB4115, HMS80N10D, HMS80N10KA, HMS80N85, HMS80N85D, HMS85N03ED, HMS85N95, HMS85N95D, HMS8N50I