HMS8N50K
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: HMS8N50K
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 57
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 7.6
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 8
nC
trⓘ -
Время нарастания: 55
ns
Cossⓘ - Выходная емкость: 25
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.55
Ohm
Тип корпуса:
DPAK
Аналог (замена) для HMS8N50K
HMS8N50K
Datasheet (PDF)
..1. Size:930K cn hmsemi
hms8n50k hms8n50i.pdf 
HMS8N50K/HMS8N50IHMS8N50K/HMS8N50I500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using H&M Semis - 7.6A, 500V, RDS(on) typ. = 0.5@VGS = 10 VAdvanced Super-Junction technology. - Low gate charge ( typical 25nC)This advanced technology has been especially tailored - High ruggednessto minimize conduction loss, provide superior switching - Fast swi
9.1. Size:757K cn hmsemi
hms8n60k hms8n60i.pdf 
HMS8N60I, HMS8N60KN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS@Tjmax 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 540 m gate charge. This super junction MOSFET fits the industrys ID 8 A AC-DC SMPS requirements for PFC, AC/DC powerconversion, and industrial power applicati
9.2. Size:933K cn hmsemi
hms8n65 hms8n65f hms8n65d.pdf 
HMS8N65D, HMS8N65, HMS8N65FN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 540 m gate charge. This super junction MOSFET fits the industrys ID 8 A AC-DC SMPS requirements for PFC, AC/DC powerconversion, and industrial power applic
9.3. Size:1089K cn hmsemi
hms8n70i hms8n70k.pdf 
HMS8N70I,HMS8N70K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction V 700 V DStechnology and design to provide excellent RDS(ON) with low R 540 m DS(ON) TYP. gate charge. This super junction MOSFET fits the industrys ID 8 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applic
9.4. Size:797K cn hmsemi
hms8n65k hms8n65i.pdf 
HMS8N65I, HMS8N65KN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 540 m gate charge. This super junction MOSFET fits the industrys ID 8 A AC-DC SMPS requirements for PFC, AC/DC powerconversion, and industrial power applications.
9.5. Size:975K cn hmsemi
hms8n60 hms8n60f hms8n60d.pdf 
HMS8N60D, HMS8N60, HMS8N60FN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS@Tjmax 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 540 m gate charge. This super junction MOSFET fits the industrys ID 8 A AC-DC SMPS requirements for PFC, AC/DC powerconversion, and industrial power
9.6. Size:965K cn hmsemi
hms8n70d hms8n70 hms8n70f.pdf 
HMS8N70D,HMS8N70,HMS8N70FN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 700 V technology and design to provide excellent RDS(ON) with low RDS(ON) TYP. 540 m gate charge. This super junction MOSFET fits the industrys ID 8 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power app
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