HMS8N60I datasheet, аналоги, основные параметры
Наименование производителя: HMS8N60I 📄📄
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 80 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
|VGSth|ⓘ - Пороговое напряжение включения: 3.5 V
Qg ⓘ - Общий заряд затвора: 14.5 nC
tr ⓘ - Время нарастания: 3.5 ns
Cossⓘ - Выходная емкость: 58 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.54 Ohm
Тип корпуса: TO251
📄📄 Копировать
Аналог (замена) для HMS8N60I
- подборⓘ MOSFET транзистора по параметрам
HMS8N60I даташит
hms8n60k hms8n60i.pdf
HMS8N60I, HMS8N60K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS@Tjmax 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 540 m gate charge. This super junction MOSFET fits the industry s ID 8 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applicati
hms8n60 hms8n60f hms8n60d.pdf
HMS8N60D, HMS8N60, HMS8N60F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS@Tjmax 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 540 m gate charge. This super junction MOSFET fits the industry s ID 8 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power
hms8n65 hms8n65f hms8n65d.pdf
HMS8N65D, HMS8N65, HMS8N65F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 540 m gate charge. This super junction MOSFET fits the industry s ID 8 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applic
hms8n65k hms8n65i.pdf
HMS8N65I, HMS8N65K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 540 m gate charge. This super junction MOSFET fits the industry s ID 8 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
Другие IGBT... HMS85N03ED, HMS85N95, HMS85N95D, HMS8N50I, HMS8N50K, HMS8N60, HMS8N60D, HMS8N60F, IRF4905, HMS8N60K, HMS8N65, HMS8N65D, HMS8N65F, HMS8N65I, HMS8N65K, HMS8N70, HMS8N70D
🌐 : EN ES РУ
Список транзисторов
Обновления
MOSFET: ASDM30P100KQ | ASDM30N90Q | ASDM30N75KQ | ASDM30N150Q | ASDM30N120Q | ASDM30N120KQ | ASDM30N100KQ | ASDM30DN40E | ASDM30DN30E | ASDM3050KQ | ASDM2305 | ASDM2301 | ASDM2300ZA | ASDM20P13S | ASDM20N90Q | ASDM20N60
Popular searches
2n555 | 2sa564a | c815 transistor | ksa1381 equivalent | 2sa1306 | b817 transistor | 2n3394 | 2sb688




