HMS8N65K datasheet, аналоги, основные параметры
Наименование производителя: HMS8N65K 📄📄
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 80 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
|VGSth|ⓘ - Пороговое напряжение включения: 3.5 V
Qg ⓘ - Общий заряд затвора: 14.5 nC
tr ⓘ - Время нарастания: 3.5 ns
Cossⓘ - Выходная емкость: 58 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.54 Ohm
Тип корпуса: TO252
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Аналог (замена) для HMS8N65K
- подборⓘ MOSFET транзистора по параметрам
HMS8N65K даташит
hms8n65k hms8n65i.pdf
HMS8N65I, HMS8N65K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 540 m gate charge. This super junction MOSFET fits the industry s ID 8 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
hms8n65 hms8n65f hms8n65d.pdf
HMS8N65D, HMS8N65, HMS8N65F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 540 m gate charge. This super junction MOSFET fits the industry s ID 8 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applic
hms8n60k hms8n60i.pdf
HMS8N60I, HMS8N60K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS@Tjmax 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 540 m gate charge. This super junction MOSFET fits the industry s ID 8 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applicati
hms8n60 hms8n60f hms8n60d.pdf
HMS8N60D, HMS8N60, HMS8N60F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS@Tjmax 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 540 m gate charge. This super junction MOSFET fits the industry s ID 8 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power
Другие IGBT... HMS8N60D, HMS8N60F, HMS8N60I, HMS8N60K, HMS8N65, HMS8N65D, HMS8N65F, HMS8N65I, SPP20N60C3, HMS8N70, HMS8N70D, HMS8N70F, HMS8N70I, HMS8N70K, HMS90N04D, AO3413L, CSD30N70
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Список транзисторов
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