HMS8N70 datasheet, аналоги, основные параметры

Наименование производителя: HMS8N70  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 80 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 700 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

|VGSth|ⓘ - Пороговое напряжение включения: 3.5 V

Qg ⓘ - Общий заряд затвора: 14.5 nC

tr ⓘ - Время нарастания: 3.5 ns

Cossⓘ - Выходная емкость: 58 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm

Тип корпуса: TO220

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Аналог (замена) для HMS8N70

- подборⓘ MOSFET транзистора по параметрам

 

HMS8N70 даташит

 ..1. Size:965K  cn hmsemi
 hms8n70d hms8n70 hms8n70f.pdf pdf_icon

HMS8N70

HMS8N70D,HMS8N70,HMS8N70F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 700 V technology and design to provide excellent RDS(ON) with low RDS(ON) TYP. 540 m gate charge. This super junction MOSFET fits the industry s ID 8 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power app

 0.1. Size:1089K  cn hmsemi
 hms8n70i hms8n70k.pdf pdf_icon

HMS8N70

HMS8N70I,HMS8N70K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction V 700 V DS technology and design to provide excellent RDS(ON) with low R 540 m DS(ON) TYP. gate charge. This super junction MOSFET fits the industry s ID 8 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applic

 9.1. Size:757K  cn hmsemi
 hms8n60k hms8n60i.pdf pdf_icon

HMS8N70

HMS8N60I, HMS8N60K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS@Tjmax 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 540 m gate charge. This super junction MOSFET fits the industry s ID 8 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applicati

 9.2. Size:933K  cn hmsemi
 hms8n65 hms8n65f hms8n65d.pdf pdf_icon

HMS8N70

HMS8N65D, HMS8N65, HMS8N65F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 540 m gate charge. This super junction MOSFET fits the industry s ID 8 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applic

ПОКАЗАТЬ ЕЩЁ

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