FDU6692 - параметры транзистора MOSFET, его аналоги, datasheet

FDU6692 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

   Наименование прибора: FDU6692
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 57 W
   Предельно допустимое напряжение сток-исток |Uds|: 30 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 16 V
   Пороговое напряжение включения |Ugs(th)|: 3 V
   Максимально допустимый постоянный ток стока |Id|: 54 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 18 nC
   Время нарастания (tr): 5 ns
   Выходная емкость (Cd): 357 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.012 Ohm
   Тип корпуса: TO251

Аналог (замена) для FDU6692

FDU6692 Datasheet (PDF)

..1. Size:83K fairchild semi
fdd6692 fdu6692.pdf

April 2001 FDD6692/FDU6692 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 54 A, 30 V. RDS(ON) = 12 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 14.5 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optim

9.1. Size:122K fairchild semi
fdd6612a fdu6612a.pdf

February 2004FDD6612A/FDU6612A30V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 30 A, 30 V RDS(ON) = 20 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DC RDS(ON) = 28 m @ VGS = 4.5 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for Low gate

9.2. Size:120K fairchild semi
fdu6612a.pdf

9.3. Size:83K fairchild semi
fdd6644 fdu6644.pdf

April 2001 FDD6644/FDU6644 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 67 A, 30 V. RDS(ON) = 8.5 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 10.5 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been opt

9.4. Size:385K fairchild semi
fdu6676as.pdf

April 2008tmFDU6676AS N-Channel PowerTrench SyncFET 30V, 90A, 5.8m General Description Features The FDU6676AS is designed to replace a single RDS(ON) = 5.8m Max, VGS = 10V MOSFET and Schottky diode in synchronous DC/DC RDS(ON) = 7.3m Max, VGS = 4.5V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

9.5. Size:118K fairchild semi
fdu6680.pdf

November 2004FDD6680 / FDU668030V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET is produced using Fairchild 46 A, 30 V RDS(ON) = 10 m @ VGS = 10 VSemiconductors advanced PowerTrench process that RDS(ON) = 15 m @ VGS = 4.5 Vhas been especially tailored to minimize the on stateresistance and yet maintain low gate charge for Low ga

9.6. Size:120K fairchild semi
fdd6688 fdd6688 fdu6688.pdf

June 2004FDD6688/FDU668830V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 84 A, 30 V. RDS(ON) = 5 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DC RDS(ON) = 6 m @ VGS = 4.5 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for Low gate charge

9.7. Size:118K fairchild semi
fdu6688.pdf