STP45L01F - описание и поиск аналогов

Green Product STP45L01F a S mHop Microelectronics C orp. Ver1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Typ Rugged and reliable. 100V 40A 20 @ VGS=10V TO-220F Package. D G G D S STF SERIES TO-220F S (TC=25 C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Symbol Param

STB45NF06 STP45NF06 N-channel 60 V, 0.023 , 38 A TO-220, D2PAK STripFETTM II Power MOSFET Features Type VDSS RDS(on) ID STP45NF06 60 V

STP45NE06 STP45NE06FP N - CHANNEL 60V - 0.022 - 45A - TO-220/TO-220FP STripFET POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP45NE06 60 V

STP45NE06 STP45NE06FP N - CHANNEL 60V - 0.022 - 45A - TO-220/TO-220FP STripFET POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP45NE06 60 V

STP45NF3LL - STP45NF3LLFP STB45NF3LL N-CHANNEL 30V - 0.014 - 45A TO-220 - TO220FP - D2PAK STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STP45NF3LL 30 V

STP45NF06 N-CHANNEL 60V - 0.022 - 38A TO-220 STripFET POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP45NF06 60V

STB45N65M5, STF45N65M5, STP45N65M5 N-channel 650 V, 0.067 typ., 35 A MDmesh V Power MOSFET in D2PAK, TO-220FP and TO-220 packages Datasheet - production data Features TAB 2 Order codes VDSS @ TJmax RDS(on) max ID 3 1 STB45N65M5 3 2 D2PAK 1 STF45N65M5 710 V 0.078 35 A TO-220FP STP45N65M5 TAB Worldwide best RDS(on) * area Higher VDSS rating and high dv/dt capa

STB45N65M5, STF45N65M5, STP45N65M5 STW45N65M5 N-channel 650 V, 0.067 typ., 35 A MDmesh V Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packages Datasheet production data Features TAB 2 VDSS @ RDS(on) 3 Order code ID 1 TJmax max 3 2 D2PAK 1 STB45N65M5 TO-220FP TAB STF45N65M5 710 V

STD45N10F7, STI45N10F7, STP45N10F7 N-channel 100 V, 0.0145 typ., 45 A, STripFET VII DeepGATE Power MOSFETs in DPAK, I2PAK and TO-220 packages Datasheet - production data Features TAB TAB RDS(on) 3 Order codes VDS ID PTOT max.(1) 1 3 STD45N10F7 DPAK 2 1 2 STI45N10F7 100 V 0.018 45 A 60 W I PAK TAB STP45N10F7 1. @ VGS = 10 V Ultra low on-resistance 3 2

STP45NF06L STB45NF06L N-CHANNEL 60V - 0.022 - 38ATO-220/ D2PAK STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STP45NF06L 60 V

STP45N60DM6, STW45N60DM6 N-channel 600 V, 0.085 typ., 30 A MDmesh DM6 Power MOSFETs in TO-220 and TO-247 packages Datasheet - production data Features TAB Order code V R max. I DS DS(on) D STP45N60DM6 600 V 0.099 30 A STW45N60DM6 3 3 Fast-recovery body diode 2 2 1 Lower R x area vs previous generation DS(on) 1 Low gate charge, input capacitan

STP45N10 STP45N10FI N - CHANNEL 100V - 0.027 - 45A - TO-220/TO-220FI POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP45N10 100 V

STP45NF3LL - STP45NF3LLFP STB45NF3LL N-channel 30V - 0.014 - 45A TO-220 - TO-220FP - D2PAK STripFET II power MOSFET General features Type VDSS RDS(on) ID 3 3 STB45NF3LL 30V

STP45NE06L STP45NE06LFP N - CHANNEL 60V - 0.022 - 45A - TO-220/TO-220FP STripFET POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP45NE06L 60 V

Green Product STB/P454 a S mHop Microelectronics C orp. Ver 1.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for extremely low RDS(ON). RDS(ON) (m ) Max VDSS ID High power and current handling capability. 4.8 @ VGS=10V TO-220 & TO-263 package. 40V 80A 7.2 @ VGS=4.5V D G STB SERIES STP SERIES TO-263(DD

isc N-Channel MOSFET Transistor STP45N65M5 FEATURES Drain Current I = 35A@ T =25 D C Drain Source Voltage V = 650V(Min) DSS Static Drain-Source On-Resistance R = 78m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STP45NF06 FEATURES Typical R (on)=0.022 DS With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Solenold and relay dirvers DC-DC &DC-CAconverters Automotive environment ABSOLUTE MAXIMUM RATING

Isc N-Channel MOSFET Transistor STP45N10F7 FEATURES Static drain-source on-resistance RDS(on) 18m 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V Gate-Source Voltage 20