Справочник MOSFET. MDP06N033TH

 

MDP06N033TH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MDP06N033TH
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 138.9 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 83.5 nC
   trⓘ - Время нарастания: 26.3 ns
   Cossⓘ - Выходная емкость: 1033 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0033 Ohm
   Тип корпуса: TO220

 Аналог (замена) для MDP06N033TH

 

 

MDP06N033TH Datasheet (PDF)

 ..1. Size:992K  magnachip
 mdp06n033th.pdf

MDP06N033TH MDP06N033TH

MDP06N033 Single N-channel Trench MOSFET 60V, 120A, 3.3m General Description Features The MDP06N033 uses advanced MagnaChips MOSFET V = 60V DSTechnology, which provides high performance in on-state I = 120A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDP06N033 is suitable device for Synchronous

 ..2. Size:289K  inchange semiconductor
 mdp06n033th.pdf

MDP06N033TH MDP06N033TH

isc N-Channel MOSFET Transistor MDP06N033THFEATURESDrain Current : I = 159.8A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 3.3m(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s

 7.1. Size:943K  magnachip
 mdp06n090th.pdf

MDP06N033TH MDP06N033TH

MDP06N090 Single N-channel Trench MOSFET 60V, 62A, 9.0m General Description Features The MDP06N090 uses advanced MagnaChips MOSFET V = 60V DSTechnology, which provides high performance in on-state I = 62A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDP06N090 is suitable device for Synchronous

 7.2. Size:289K  inchange semiconductor
 mdp06n090th.pdf

MDP06N033TH MDP06N033TH

isc N-Channel MOSFET Transistor MDP06N090THFEATURESDrain Current : I = 62A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 9m(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

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