MDP06N033TH. Аналоги и основные параметры
Наименование производителя: MDP06N033TH
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 138.9 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 26.3 ns
Cossⓘ - Выходная емкость: 1033 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0033 Ohm
Тип корпуса: TO220
Аналог (замена) для MDP06N033TH
- подборⓘ MOSFET транзистора по параметрам
MDP06N033TH даташит
mdp06n033th.pdf
MDP06N033 Single N-channel Trench MOSFET 60V, 120A, 3.3m General Description Features The MDP06N033 uses advanced MagnaChip s MOSFET V = 60V DS Technology, which provides high performance in on-state I = 120A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) quality. MDP06N033 is suitable device for Synchronous
mdp06n033th.pdf
isc N-Channel MOSFET Transistor MDP06N033TH FEATURES Drain Current I = 159.8A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 3.3m (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s
mdp06n090th.pdf
MDP06N090 Single N-channel Trench MOSFET 60V, 62A, 9.0m General Description Features The MDP06N090 uses advanced MagnaChip s MOSFET V = 60V DS Technology, which provides high performance in on-state I = 62A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) quality. MDP06N090 is suitable device for Synchronous
mdp06n090th.pdf
isc N-Channel MOSFET Transistor MDP06N090TH FEATURES Drain Current I = 62A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 9m (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno
Другие MOSFET... FDU6692 , FDH20N40 , FDP20N40 , FDH34N40 , FMV60N280S2HF , IRF3305B , ISW65R041CFD , MDI5N40RH , IRF840 , MDP06N090TH , MDP10N055TH , MDP12N50TH , MDP13N50TH , MDP18N50TH , MDP5N50TH , MDP7N50 , MDP9N50TH .
History: AP4955GM | BRCS4484SC | 2N65L-TMA-T | 2N6788L | SI2305CDS-T1-GE3 | BRCS70N08IP | STB17N80K5
History: AP4955GM | BRCS4484SC | 2N65L-TMA-T | 2N6788L | SI2305CDS-T1-GE3 | BRCS70N08IP | STB17N80K5
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Список транзисторов
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