Справочник MOSFET. MMD80R1K2PRH

 

MMD80R1K2PRH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MMD80R1K2PRH
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 56.8 W
   Предельно допустимое напряжение сток-исток |Uds|: 800 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
   Максимально допустимый постоянный ток стока |Id|: 4.5 A
   Максимальная температура канала (Tj): 150 °C
   Время нарастания (tr): 21.2 ns
   Выходная емкость (Cd): 398 pf
   Сопротивление сток-исток открытого транзистора (Rds): 1.2 Ohm
   Тип корпуса: TO252

 Аналог (замена) для MMD80R1K2PRH

 

 

MMD80R1K2PRH Datasheet (PDF)

 ..1. Size:1477K  magnachip
mmd80r1k2prh.pdf

MMD80R1K2PRH
MMD80R1K2PRH

MMD80R1K2P Final Datasheet MMD80R1K2P 800V 1.2 N-channel MOSFET Description MMD80R1K2P is power MOSFET using Magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well

 ..2. Size:309K  inchange semiconductor
mmd80r1k2prh.pdf

MMD80R1K2PRH
MMD80R1K2PRH

isc N-Channel MOSFET Transistor MMD80R1K2PRHFEATURESDrain Current : I = 4.5A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

 5.1. Size:1227K  magnachip
mmd80r1k2qzrh.pdf

MMD80R1K2PRH
MMD80R1K2PRH

MMD80R1K2QZ Datasheet MMD80R1K2QZ 800V 1.2 N-channel MOSFET Description MMD80R1K2QZ is power MOSFET using Magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well a

 8.1. Size:1279K  magnachip
mmd80r900prh.pdf

MMD80R1K2PRH
MMD80R1K2PRH

MMD80R900P Datasheet MMD80R900P 800V 0.9 N-channel MOSFET Description MMD80R900P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as lo

 8.2. Size:1333K  magnachip
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MMD80R1K2PRH
MMD80R1K2PRH

MMD80R900QZ Datasheet MMD80R900QZ 800V 0.90 N-channel MOSFET Description MMD80R900QZ is power MOSFET using Magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well

 8.3. Size:1323K  magnachip
mmd80r900pcrh.pdf

MMD80R1K2PRH
MMD80R1K2PRH

MMD80R900PC Datasheet MMD80R900PC 800V 0.9 N-channel MOSFET Description MMD80R900PC is power MOSFET using Magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as

 8.4. Size:208K  inchange semiconductor
mmd80r900p.pdf

MMD80R1K2PRH
MMD80R1K2PRH

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor MMD80R900PFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsMotor contorlDC-DC conventersABSOLUTE MAXIMUM RATINGS(

 8.5. Size:310K  inchange semiconductor
mmd80r900prh.pdf

MMD80R1K2PRH
MMD80R1K2PRH

isc N-Channel MOSFET Transistor MMD80R900PRHFEATURESDrain Current : I = 6A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 0.9(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

 8.6. Size:310K  inchange semiconductor
mmd80r900pcrh.pdf

MMD80R1K2PRH
MMD80R1K2PRH

isc N-Channel MOSFET Transistor MMD80R900PCRHFEATURESDrain Current : I = 6A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 0.9(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

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History: JCS4N90RA

 

 
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