MMF80R450QZTH. Аналоги и основные параметры
Наименование производителя: MMF80R450QZTH
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 31 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 11 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 42 ns
Cossⓘ - Выходная емкость: 40 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.45 Ohm
Тип корпуса: TO220F
Аналог (замена) для MMF80R450QZTH
- подборⓘ MOSFET транзистора по параметрам
MMF80R450QZTH даташит
mmf80r450qzth.pdf
MMF80R450QZ Datasheet MMF80R450QZ 800V 0.45 N-channel MOSFET Description MMF80R450QZ is power MOSFET using Magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well
mmf80r450pbth.pdf
MMF80R450PB Datasheet MMF80R450PB 800V 0.45 N-channel MOSFET Description MMF80R450PB is power MOSFET using Magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well a
mmf80r450p.pdf
MMF80R450P Datasheet MMF80R450P 800V 0.45 N-channel MOSFET Description MMF80R450P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l
mmf80r450pth.pdf
isc N-Channel MOSFET Transistor MMF80R450PTH FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 0.45 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so
Другие MOSFET... MME60R290QRH , MME65R280QRH , MME80R290PRH , MMF60R190QTH , MMF60R280QBTH , MMF60R580QTH , MMF65R600QTH , MMF80R450PBTH , IRF630 , MMF80R900PCTH , MMF80R900QZTH , MMF80R900PBTH , MMFT60R195PCTH , S40N14S , HY3408 , STP1806 , YMP230N55 .
History: STD12NF06L
History: STD12NF06L
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Список транзисторов
Обновления
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