MMF80R900PBTH - описание и поиск аналогов

 

MMF80R900PBTH. Аналоги и основные параметры

Наименование производителя: MMF80R900PBTH

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 29.8 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 800 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 6 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 22.4 ns

Cossⓘ - Выходная емкость: 508 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.9 Ohm

Тип корпуса: TO220F

Аналог (замена) для MMF80R900PBTH

- подборⓘ MOSFET транзистора по параметрам

 

MMF80R900PBTH даташит

 ..1. Size:1619K  magnachip
mmf80r900pbth.pdfpdf_icon

MMF80R900PBTH

MMF80R900PB Datasheet MMF80R900PB 800V 0.9 N-channel MOSFET Description MMF80R900PB is power MOSFET using Magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as

 4.1. Size:1446K  magnachip
mmf80r900pcth.pdfpdf_icon

MMF80R900PBTH

MMF80R900PC Datasheet MMF80R900PC 800V 0.9 N-channel MOSFET Description MMF80R900PC is power MOSFET using Magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as

 4.2. Size:1136K  magnachip
mmf80r900pth.pdfpdf_icon

MMF80R900PBTH

MMF80R900P Datasheet MMF80R900P 800V 0.9 N-channel MOSFET Description MMF80R900P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as lo

 4.3. Size:279K  inchange semiconductor
mmf80r900pcth.pdfpdf_icon

MMF80R900PBTH

isc N-Channel MOSFET Transistor MMF80R900PCTH FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 0.9 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol

Другие MOSFET... MMF60R190QTH , MMF60R280QBTH , MMF60R580QTH , MMF65R600QTH , MMF80R450PBTH , MMF80R450QZTH , MMF80R900PCTH , MMF80R900QZTH , 2SK3878 , MMFT60R195PCTH , S40N14S , HY3408 , STP1806 , YMP230N55 , JFAM18N50C , JFAM20N50C , JFAM20N50D .

 

 

 

 

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