Справочник MOSFET. S40N14S

 

S40N14S Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: S40N14S
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 137 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 140 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0034 Ohm
   Тип корпуса: TO263
     - подбор MOSFET транзистора по параметрам

 

S40N14S Datasheet (PDF)

 ..1. Size:2339K  cn si-tech
s40n14r s40n14s s40n14rn s40n14rp.pdfpdf_icon

S40N14S

S40N14R/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFETFeatures Applications VDS=40V,ID=140A DC Motor Control Rds(on)(typ)=3.4m@Vgs=4.5V DC-DC Converters Rds(on)(typ)=2.8m@Vgs=10V BMS 100% Avalanche Tested SMPS 100% Rg Tested Automotive Environment Lead-Free (RoHS Compliant) Internal Circuit and Pin Description

 ..2. Size:271K  inchange semiconductor
s40n14s.pdfpdf_icon

S40N14S

isc N-Channel MOSFET Transistor S40N14SFEATURESDrain Current I = 140A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R : 3.4m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra Low On-resistanceFast SwitchingABSOLUTE MAXIMUM

 9.1. Size:368K  fairchild semi
rf1s40n10.pdfpdf_icon

S40N14S

RFG40N10, RFP40N10, RF1S40N10,RF1S40N10SMData Sheet January 200240A, 100V, 0.040 Ohm, N-Channel Power FeaturesMOSFETs 40A, 100VThese are N-Channel power MOSFETs manufactured using rDS(ON) = 0.040the MegaFET process. This process, which uses feature UIS Rating Curvesizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulti

 9.2. Size:369K  fairchild semi
rfg40n10 rfp40n10 rf1s40n10-sm.pdfpdf_icon

S40N14S

RFG40N10, RFP40N10, RF1S40N10,RF1S40N10SMData Sheet January 200240A, 100V, 0.040 Ohm, N-Channel Power FeaturesMOSFETs 40A, 100VThese are N-Channel power MOSFETs manufactured using rDS(ON) = 0.040the MegaFET process. This process, which uses feature UIS Rating Curvesizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulti

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SH8K12 | IRC740PBF | 2SK523

 

 
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