JFAM20N50E - аналоги и даташиты транзистора

 

JFAM20N50E - Даташиты. Аналоги. Основные параметры


   Наименование производителя: JFAM20N50E
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 271 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 85 ns
   Cossⓘ - Выходная емкость: 250 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.35 Ohm
   Тип корпуса: TO3P
 

 Аналог (замена) для JFAM20N50E

   - подбор ⓘ MOSFET транзистора по параметрам

 

JFAM20N50E Datasheet (PDF)

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JFAM20N50E

JFAM20N50E 500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 5.1. Size:545K  jiaensemi
 jfam20n50d.pdf pdf_icon

JFAM20N50E

JFAM20N50D 500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 5.2. Size:845K  jiaensemi
 jfam20n50c.pdf pdf_icon

JFAM20N50E

JFAM20N50C 500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 7.1. Size:833K  jiaensemi
 jfam20n65c.pdf pdf_icon

JFAM20N50E

JFAM20N65C 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... MMFT60R195PCTH , S40N14S , HY3408 , STP1806 , YMP230N55 , JFAM18N50C , JFAM20N50C , JFAM20N50D , 4435 , JFAM20N60C , JFAM20N60D , JFAM20N60E , JFAM20N65C , JFAM20N65E , JFAM24N50C , JFAM25N50E , JFAM30N50E .

History: RU7N65L | JMSH0803MC

 

 
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