JFAM20N60D datasheet, аналоги, основные параметры

Наименование производителя: JFAM20N60D  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 271 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 130 ns

Cossⓘ - Выходная емкость: 1250 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.5 Ohm

Тип корпуса: TO3P

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Аналог (замена) для JFAM20N60D

- подборⓘ MOSFET транзистора по параметрам

 

JFAM20N60D даташит

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 jfam20n60d.pdf pdf_icon

JFAM20N60D

JFAM20N60D 600V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

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 jfam20n60e.pdf pdf_icon

JFAM20N60D

JFAM20N60E 600V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

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 jfam20n60c.pdf pdf_icon

JFAM20N60D

JFAM20N60C 600V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

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 jfam20n65c.pdf pdf_icon

JFAM20N60D

JFAM20N65C 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... HY3408, STP1806, YMP230N55, JFAM18N50C, JFAM20N50C, JFAM20N50D, JFAM20N50E, JFAM20N60C, SKD502T, JFAM20N60E, JFAM20N65C, JFAM20N65E, JFAM24N50C, JFAM25N50E, JFAM30N50E, JFAM30N60E, JFAM50N50C