Справочник MOSFET. JFAM20N60E

 

JFAM20N60E Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: JFAM20N60E
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 271 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 135 ns
   Cossⓘ - Выходная емкость: 1150 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.5 Ohm
   Тип корпуса: TO3P
 

 Аналог (замена) для JFAM20N60E

   - подбор ⓘ MOSFET транзистора по параметрам

 

JFAM20N60E Datasheet (PDF)

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JFAM20N60E

JFAM20N60E 600V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 5.1. Size:530K  jiaensemi
 jfam20n60d.pdf pdf_icon

JFAM20N60E

JFAM20N60D 600V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 5.2. Size:1053K  jiaensemi
 jfam20n60c.pdf pdf_icon

JFAM20N60E

JFAM20N60C 600V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 6.1. Size:833K  jiaensemi
 jfam20n65c.pdf pdf_icon

JFAM20N60E

JFAM20N65C 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... STP1806 , YMP230N55 , JFAM18N50C , JFAM20N50C , JFAM20N50D , JFAM20N50E , JFAM20N60C , JFAM20N60D , IRFB3607 , JFAM20N65C , JFAM20N65E , JFAM24N50C , JFAM25N50E , JFAM30N50E , JFAM30N60E , JFAM50N50C , JFAM7N90C .

History: IPA80R1K2P7 | IRFBC30ASPBF

 

 
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