Справочник MOSFET. JFAM20N65E

 

JFAM20N65E Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: JFAM20N65E
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 271 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 130 ns
   Cossⓘ - Выходная емкость: 1100 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.5 Ohm
   Тип корпуса: TO3P
 

 Аналог (замена) для JFAM20N65E

   - подбор ⓘ MOSFET транзистора по параметрам

 

JFAM20N65E Datasheet (PDF)

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JFAM20N65E

JFAM20N65E 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

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 jfam20n65c.pdf pdf_icon

JFAM20N65E

JFAM20N65C 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

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 jfam20n60e.pdf pdf_icon

JFAM20N65E

JFAM20N60E 600V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 6.2. Size:530K  jiaensemi
 jfam20n60d.pdf pdf_icon

JFAM20N65E

JFAM20N60D 600V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... JFAM18N50C , JFAM20N50C , JFAM20N50D , JFAM20N50E , JFAM20N60C , JFAM20N60D , JFAM20N60E , JFAM20N65C , RFP50N06 , JFAM24N50C , JFAM25N50E , JFAM30N50E , JFAM30N60E , JFAM50N50C , JFAM7N90C , JFFC10N65D , JFFC13N65D .

History: SUP85N03-07P | KI5P04DS | SSF1016D | IPD60R3K4CE | IPP16CN10N | CM10N60F | NCEP3065BQU

 

 
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