JFPC10N65C datasheet, аналоги, основные параметры

Наименование производителя: JFPC10N65C  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 186 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 10 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 23 ns

Cossⓘ - Выходная емкость: 136 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.83 Ohm

Тип корпуса: TO220

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Аналог (замена) для JFPC10N65C

- подборⓘ MOSFET транзистора по параметрам

 

JFPC10N65C даташит

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JFPC10N65C

JFPC10N65C JFFC10N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 10A, 650V, RDS(on)typ. = 0.78 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performanc

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JFPC10N65C

JFPC10N65CI 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 10A, 650V, RDS(on)typ. = 0.8 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, and withst

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JFPC10N65C

JFPC10N65D 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

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JFPC10N65C

JFPC10N60C JFFM10N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 10A, 600V, RDS(on)typ. = 0.68 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performanc

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Другие IGBT... JFHM20N60C, JFHM20N60E, JFHM30N50P, JFHM50N50C, JFHM9N150E, JFPC10N60C, JFFM10N60C, JFPC10N60CI, IRF520, JFFC10N65C, JFPC10N65CI, JFPC10N65D, JFPC10N80C, JFFM10N80C, JFPC11N50C, JFFM11N50C, JFPC12N60C