JFPC10N80C datasheet, аналоги, основные параметры

Наименование производителя: JFPC10N80C  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 167 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 800 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 10 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

Cossⓘ - Выходная емкость: 150 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.2 Ohm

Тип корпуса: TO220

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Аналог (замена) для JFPC10N80C

- подборⓘ MOSFET транзистора по параметрам

 

JFPC10N80C даташит

 ..1. Size:518K  jiaensemi
 jfpc10n80c jffm10n80c.pdf pdf_icon

JFPC10N80C

JFPC10N80C JFFM10N80C N- MOS / N-CHANNEL POWER MOSFET RoHS FEATURES LOW THERMAL RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT APPLICATION ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER

 7.1. Size:507K  jiaensemi
 jfpc10n65ci.pdf pdf_icon

JFPC10N80C

JFPC10N65CI 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 10A, 650V, RDS(on)typ. = 0.8 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, and withst

 7.2. Size:843K  jiaensemi
 jfpc10n60c jffm10n60c.pdf pdf_icon

JFPC10N80C

JFPC10N60C JFFM10N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 10A, 600V, RDS(on)typ. = 0.68 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performanc

 7.3. Size:777K  jiaensemi
 jfpc10n65d.pdf pdf_icon

JFPC10N80C

JFPC10N65D 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

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