JFPC10N80C MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: JFPC10N80C
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 167 W
Предельно допустимое напряжение сток-исток |Uds|: 800 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Максимально допустимый постоянный ток стока |Id|: 10 A
Максимальная температура канала (Tj): 150 °C
Выходная емкость (Cd): 150 pf
Сопротивление сток-исток открытого транзистора (Rds): 1.2 Ohm
Тип корпуса: TO220
Аналог (замена) для JFPC10N80C
JFPC10N80C Datasheet (PDF)
jfpc10n80c jffm10n80c.pdf
JFPC10N80C JFFM10N80C N- MOS / N-CHANNEL POWER MOSFET RoHS FEATURESLOW THERMAL RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT APPLICATION: ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER
jfpc10n65ci.pdf
JFPC10N65CI 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 10A, 650V, RDS(on)typ. = 0.8@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, and withst
jfpc10n60c jffm10n60c.pdf
JFPC10N60C JFFM10N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 10A, 600V, RDS(on)typ. = 0.68@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performanc
jfpc10n65d.pdf
JFPC10N65D 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
jfpc10n65c jffc10n65c.pdf
JFPC10N65C JFFC10N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 10A, 650V, RDS(on)typ. = 0.78@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performanc
jfpc10n60ci.pdf
JFPC10N60CI 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 10A, 600V, RDS(on)typ. = 0.8@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, and withst
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
