Справочник MOSFET. JFPC13N60CI

 

JFPC13N60CI Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: JFPC13N60CI
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 186 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 13 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 23 ns
   Cossⓘ - Выходная емкость: 136 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.83 Ohm
   Тип корпуса: TO220
     - подбор MOSFET транзистора по параметрам

 

JFPC13N60CI Datasheet (PDF)

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JFPC13N60CI

JFPC13N60CI 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 13A, 600V, RDS(on)typ. = 0.65@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, and withs

 6.1. Size:509K  jiaensemi
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JFPC13N60CI

JFPC13N65CI 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 13A, 650V, RDS(on)typ. = 0.71@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, and withs

 6.2. Size:923K  jiaensemi
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JFPC13N60CI

JFPC13N65C JFFC13N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 13A, 650V, RDS(on)typ. = 0.55@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performan

 7.1. Size:692K  jiaensemi
jfpc13n50c jffm13n50c.pdfpdf_icon

JFPC13N60CI

JFPC13N50C JFFM13N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 13A, 500V, RDS(on)typ. = 380m@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performanc

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History: STT4PF20V | IPA65R125C7 | AP9971GM | SL9435A | SJMN600R70MD | AP2N050G | SWN4N70D1

 

 
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