JFPC13N60CI Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: JFPC13N60CI
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 186 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 13 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 23 ns
Cossⓘ - Выходная емкость: 136 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.83 Ohm
Тип корпуса: TO220
Аналог (замена) для JFPC13N60CI
JFPC13N60CI Datasheet (PDF)
jfpc13n60ci.pdf

JFPC13N60CI 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 13A, 600V, RDS(on)typ. = 0.65@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, and withs
jfpc13n65ci.pdf

JFPC13N65CI 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 13A, 650V, RDS(on)typ. = 0.71@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, and withs
jfpc13n65c jffc13n65c.pdf

JFPC13N65C JFFC13N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 13A, 650V, RDS(on)typ. = 0.55@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performan
jfpc13n50c jffm13n50c.pdf

JFPC13N50C JFFM13N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 13A, 500V, RDS(on)typ. = 380m@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performanc
Другие MOSFET... JFPC11N50C , JFFM11N50C , JFPC12N60C , JFFM12N60C , JFPC12N65C , JFPC12N65D , JFPC13N50C , JFFM13N50C , STP65NF06 , JFPC13N65C , JFFC13N65C , JFPC13N65CI , JFPC16N50C , JFFM16N50C , JFPC18N50C , JFFM18N50C , JFPC18N60C .
History: NCEP095N10AG | SISS23DN | DJR0417 | RCJ100N25 | VTI640F | IRFZ44ELPBF | NP60N055KUG
History: NCEP095N10AG | SISS23DN | DJR0417 | RCJ100N25 | VTI640F | IRFZ44ELPBF | NP60N055KUG



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