JFPC13N65CI datasheet, аналоги, основные параметры

Наименование производителя: JFPC13N65CI  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 180 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 13 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 23 ns

Cossⓘ - Выходная емкость: 136 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.85 Ohm

Тип корпуса: TO220

  📄📄 Копировать 

Аналог (замена) для JFPC13N65CI

- подборⓘ MOSFET транзистора по параметрам

 

JFPC13N65CI даташит

 ..1. Size:509K  jiaensemi
 jfpc13n65ci.pdf pdf_icon

JFPC13N65CI

JFPC13N65CI 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 13A, 650V, RDS(on)typ. = 0.71 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, and withs

 4.1. Size:923K  jiaensemi
 jfpc13n65c jffc13n65c.pdf pdf_icon

JFPC13N65CI

JFPC13N65C JFFC13N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 13A, 650V, RDS(on)typ. = 0.55 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performan

 6.1. Size:507K  jiaensemi
 jfpc13n60ci.pdf pdf_icon

JFPC13N65CI

JFPC13N60CI 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 13A, 600V, RDS(on)typ. = 0.65 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, and withs

 7.1. Size:692K  jiaensemi
 jfpc13n50c jffm13n50c.pdf pdf_icon

JFPC13N65CI

JFPC13N50C JFFM13N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 13A, 500V, RDS(on)typ. = 380m @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performanc

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... JFFM12N60C, JFPC12N65C, JFPC12N65D, JFPC13N50C, JFFM13N50C, JFPC13N60CI, JFPC13N65C, JFFC13N65C, IRF9640, JFPC16N50C, JFFM16N50C, JFPC18N50C, JFFM18N50C, JFPC18N60C, JFFM18N60C, JFPC18N60CI, JFPC18N65C