JFPC18N65C - аналоги и даташиты транзистора

 

JFPC18N65C - Даташиты. Аналоги. Основные параметры


   Наименование производителя: JFPC18N65C
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 245 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 18 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 55 ns
   Cossⓘ - Выходная емкость: 200 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.5 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для JFPC18N65C

   - подбор ⓘ MOSFET транзистора по параметрам

 

JFPC18N65C Datasheet (PDF)

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 jfpc18n65c jffc18n65c.pdf pdf_icon

JFPC18N65C

JFFC18N65C JFPC18N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A, 650V, RDS(on)typ. = 0.45@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching perf

 0.1. Size:488K  jiaensemi
 jfpc18n65ci.pdf pdf_icon

JFPC18N65C

JFPC18N65CI 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A , 650V, RDS(on)typ. = 0.60@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, and wit

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 jfpc18n60ci.pdf pdf_icon

JFPC18N65C

JFPC18N60CI 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A, 600V, RDS(on)typ. = 0.52@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, and withs

 6.2. Size:862K  jiaensemi
 jfpc18n60c jffm18n60c.pdf pdf_icon

JFPC18N65C

JFFM18N60C JFPC18N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A, 600V, RDS(on)typ. = 0.42@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching perf

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... JFPC13N65CI , JFPC16N50C , JFFM16N50C , JFPC18N50C , JFFM18N50C , JFPC18N60C , JFFM18N60C , JFPC18N60CI , AO4407A , JFFC18N65C , JFPC18N65CI , JFPC20N50C , JFFM20N50C , JFPC20N60C , JFPC20N65C , JFPC24N50C , JFFM24N50C .

History: IXKC19N60C5 | QM2504W

 

 
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