Справочник MOSFET. JFPC2N80C

 

JFPC2N80C Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: JFPC2N80C
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 80 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 12 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Cossⓘ - Выходная емкость: 200 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для JFPC2N80C

   - подбор ⓘ MOSFET транзистора по параметрам

 

JFPC2N80C Datasheet (PDF)

 ..1. Size:525K  jiaensemi
jfpc2n80c jffm12n80c.pdfpdf_icon

JFPC2N80C

JFPC2N80C JFFM12N80C N- MOS / N-CHANNEL POWER MOSFET RoHS FEATURESLOW THERMAL RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT APPLICATION: ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER S

 9.1. Size:797K  jiaensemi
jfpc20n65c.pdfpdf_icon

JFPC2N80C

JFPC20N65C 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 9.2. Size:890K  jiaensemi
jfpc20n50c jffm20n50c.pdfpdf_icon

JFPC2N80C

JFFM20N50C JFPC20N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 20A, 500V, RDS(on)typ. = 0.21@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching perf

 9.3. Size:796K  jiaensemi
jfpc20n60c.pdfpdf_icon

JFPC2N80C

JFPC20N60C 600V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

Другие MOSFET... JFFC18N65C , JFPC18N65CI , JFPC20N50C , JFFM20N50C , JFPC20N60C , JFPC20N65C , JFPC24N50C , JFFM24N50C , 20N60 , JFFM12N80C , JFPC5N60C , JFFM5N60C , JFPC5N65C , JFFC5N65C , JFPC5N80C , JFFM5N80C , JFPC5N90C .

History: IRHN7250 | STB200NF03 | HRLP370N10K | KIA2808A-220 | SSF60R130S2 | WMK11N70SR | WMP15N65C2

 

 
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