Справочник MOSFET. SRC60R022FBS

 

SRC60R022FBS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SRC60R022FBS
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 595 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 115 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 168 nC
   trⓘ - Время нарастания: 26 ns
   Cossⓘ - Выходная емкость: 533 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.022 Ohm
   Тип корпуса: TO247

 Аналог (замена) для SRC60R022FBS

 

 

SRC60R022FBS Datasheet (PDF)

 ..1. Size:1263K  sanrise-tech
src60r022fbs.pdf

SRC60R022FBS SRC60R022FBS

Datasheet22m, 600V, Super Junction N-Channel Power MOSFET SRC60R022FBSGeneral Description SymbolThe Sanrise SRC60R022FBS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensit

 0.1. Size:1172K  sanrise-tech
src60r022fbst4g.pdf

SRC60R022FBS SRC60R022FBS

Datasheet22m, 600V, Super Junction N-Channel Power MOSFET SRC60R022FBSGeneral Description SymbolThe Sanrise SRC60R022FBS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensit

 6.1. Size:1904K  sanrise-tech
src60r029fbs.pdf

SRC60R022FBS SRC60R022FBS

Datasheet29m, 600V, Super Junction N-Channel Power MOSFET SRC60R029FBSGeneral Description SymbolThe Sanrise SRC60R029FBS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensit

 7.1. Size:1038K  1
src60r078b.pdf

SRC60R022FBS SRC60R022FBS

Datasheet 78m, 600V, Super Junction N-Channel Power MOSFET SRC60R078B General Description Symbol The Sanrise SRC60R078B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

 7.2. Size:643K  1
src60r090b.pdf

SRC60R022FBS SRC60R022FBS

Datasheet 90m, 600V, Super Junction N-Channel Power MOSFET SRC60R090B General Description Symbol The Sanrise SRC60R090B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

 7.3. Size:619K  sanrise-tech
src60r075bs.pdf

SRC60R022FBS SRC60R022FBS

Preliminary Datasheet75m, 600V, Super Junction N-Channel Power MOSFET SRC60R075BSGeneral Description SymbolThe Sanrise SRC60R075BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior pow

 7.4. Size:1266K  sanrise-tech
src60r064s.pdf

SRC60R022FBS SRC60R022FBS

Preliminary Datasheet64m, 600V, Super Junction N-Channel Power MOSFET SRC60R064SGeneral Description SymbolThe Sanrise SRC60R064S is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior power

 7.5. Size:1606K  sanrise-tech
src60r030fbs.pdf

SRC60R022FBS SRC60R022FBS

Datasheet30m, 600V, Super Junction N-Channel Power MOSFET SRC60R030FBSGeneral DescriptionSymbolThe Sanrise SRC60R030FBS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensi

 7.6. Size:1038K  sanrise-tech
src60r078b.pdf

SRC60R022FBS SRC60R022FBS

Datasheet 78m, 600V, Super Junction N-Channel Power MOSFET SRC60R078B General Description Symbol The Sanrise SRC60R078B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

 7.7. Size:1146K  sanrise-tech
src60r075bsd88.pdf

SRC60R022FBS SRC60R022FBS

Datasheet75m, 600V, Super Junction N-Channel Power MOSFET SRC60R075BSGeneral Description SymbolThe Sanrise SRC60R075BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

 7.8. Size:1755K  sanrise-tech
src60r068bs.pdf

SRC60R022FBS SRC60R022FBS

Datasheet68m, 600V, Super Junction N-Channel Power MOSFET SRC60R068BSGeneral Description SymbolThe Sanrise SRC60R068BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

 7.9. Size:1572K  sanrise-tech
src60r075fbs.pdf

SRC60R022FBS SRC60R022FBS

Datasheet75m, 600V, Super Junction N-Channel Power MOSFET SRC60R075FBSGeneral Description SymbolThe Sanrise SRC60R075FBS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensit

 7.10. Size:1103K  sanrise-tech
src60r068bstl.pdf

SRC60R022FBS SRC60R022FBS

Datasheet68m, 600V, Super Junction N-Channel Power MOSFET SRC60R068BSGeneral Description SymbolThe Sanrise SRC60R068BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

 7.11. Size:1422K  sanrise-tech
src60r017fb.pdf

SRC60R022FBS SRC60R022FBS

Datasheet17m, 600V, Super Junction N-Channel Power MOSFET SRC60R017FBGeneral DescriptionSymbolThe Sanrise SRC60R017FB is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

 7.12. Size:909K  sanrise-tech
src60r045fb.pdf

SRC60R022FBS SRC60R022FBS

Datasheet 45m 600V, Super Junction N-Channel Power MOSFET SRC60R045FB General Description Symbol The Sanrise SRC60R045FB is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

 7.13. Size:1771K  sanrise-tech
src60r090bs.pdf

SRC60R022FBS SRC60R022FBS

Datasheet90m, 600V, Super Junction N-Channel Power MOSFET SRC60R090BSGeneral Description SymbolThe Sanrise SRC60R090BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

 7.14. Size:1180K  sanrise-tech
src60r037b.pdf

SRC60R022FBS SRC60R022FBS

Datasheet37m, 600V, Super Junction N-Channel Power MOSFET SRC60R037BGeneral Description SymbolThe Sanrise SRC60R037B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity an

 7.15. Size:696K  sanrise-tech
src60r030bs.pdf

SRC60R022FBS SRC60R022FBS

Datasheet 30m, 600V, Super Junction N-Channel Power MOSFET SRC60R030BS General Description Symbol The Sanrise SRC60R030BS is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

 7.16. Size:1326K  sanrise-tech
src60r017fbt4g.pdf

SRC60R022FBS SRC60R022FBS

Datasheet17m, 600V, Super Junction N-Channel Power MOSFET SRC60R017FBGeneral Description SymbolThe Sanrise SRC60R017FB is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

 7.17. Size:1771K  sanrise-tech
src60r078bs.pdf

SRC60R022FBS SRC60R022FBS

Datasheet78m, 600V, Super Junction N-Channel Power MOSFET SRC60R078BSGeneral Description SymbolThe Sanrise SRC60R078BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

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