July 2010FDME1034CZTComplementary PowerTrench MOSFET N-channel: 20 V, 3.8 A, 66 m P-channel: -20 V, -2.6 A, 142 mFeatures General DescriptionThis device is designed specifically as a single package solution Q1: N-Channelfor a DC/DC Switching MOSFET in cellular handset and other Max rDS(on) = 66 m at VGS = 4.5 V, ID = 3.4 Aultra-portable applications. It features

July 2010FDME1023PZTDual P-Channel PowerTrench MOSFET -20 V, -2.6 A, 142 mFeatures General DescriptionThis device is designed specifically as a single package solution Max rDS(on) = 142 m at VGS = -4.5 V, ID = -2.3 Afor the battery charges switch in cellular handset and other Max rDS(on) = 213 m at VGS = -2.5 V, ID = -1.8 Aultra-portable applications. It features two

July 2010FDME1024NZTDual N-Channel PowerTrench MOSFET 20 V, 3.8 A, 66 mFeatures General Description Max rDS(on) = 66 m at VGS = 4.5 V, ID = 3.4 A This device is designed specifically as a single package solution for dual switching requirement in cellular handset and other Max rDS(on) = 86 m at VGS = 2.5 V, ID = 2.9 Aultra-portable applications. It features two independe

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur