STP15L01F - описание и поиск аналогов

r P Pr P P STP15L01/F a S mHop Microelectronics C orp. Ver1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Typ VDSS ID Rugged and reliable. 110 @ VGS=10V TO-220 and TO-220F Package. 100V 15A 121 @ VGS=4.5V D G G D S G D S STP SERIES STF SERIES TO-220 TO-220F S (TC=25 C unless ot

STF15NM65N-STI15NM65N-STW15NM65N STB15NM65N-STP15NM65N N-channel 650V - 0.25 - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh Power MOSFET Features VDSS Type RDS(on) Max ID (@Tjmax) 3 2 3 1 2 1 STB15NM65N 710 V

STD150N3LLH6 STP150N3LLH6, STU150N3LLH6 N-channel 30 V, 0.0024 , 80 A, DPAK, IPAK, TO-220 STripFET VI DeepGATE Power MOSFET Features Type VDSS RDS(on) max ID STD150N3LLH6 30 V 0.0028 80 A 3 3 2 STP150N3LLH6 30 V 0.0033 80 A 1 1 STu150N3LLH6 30 V 0.0033 80 A IPAK DPAK RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) 3 2 Hi

STP15NK50Z/FP - STB15NK50Z STB15NK50Z-1 - STW15NK50Z N-channel 500V - 0.30 - 14A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-protected SuperMESH Power MOSFET General features Type VDSS RDS(on) ID Pw 3 STP15NK50Z 500V

STP15N05L STP15N05LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STP15N05L 50 V

STB15NM60ND - STF/I15NM60ND STP15NM60ND - STW15NM60ND N-channel 600 V - 0.27 - 14 A - FDmesh II Power MOSFET D2PAK, I2PAK, TO-220, TO-220FP, TO-247 Features Type VDSS (@Tjmax)RDS(on) max ID 3 3 STB15NM60ND 14 A 2 1 1 STF15NM60ND 14 A D2PAK I PAK STI15NM60ND 650 V 0.299 14 A(1) 3 2 1 STP15NM60ND 14 A STW15NM60ND 14 A TO-247 1. Limited only by maximum temperature

STP15NK50Z/FP, STB15NK50Z STB15NK50Z-1, STW15NK50Z N-CHANNEL500V-0.30 -14ATO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE VDSS RDS(on) ID Pw STP15NK50Z 500 V

STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5 N-channel 800 V, 0.3 typ., 14 A MDmesh K5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 packages Datasheet - production data Features TAB Order code VDS RDS(on)max ID PTOT 3 STB15N80K5 190 W 1 3 2 STF15N80K5 35 W D2PAK 1 800 V 0.375 14 A TO-220FP STP15N80K5 190 W TAB STW15N80K5 Industry s lowest RDS(on)

STF15N95K5, STP15N95K5, STW15N95K5 N-channel 950 V, 0.41 typ., 12 A SuperMESH 5 Power MOSFETs in TO-220FP, TO-220 and TO-247 packages Datasheet - production data Features Order codes VDS RDS(on)max ID PTOT STF15N95K5 30 W 3 2 STP15N95K5 950 V 0.5 12 A 1 170 W TO-220FP STW15N95K5 TAB TO-220 worldwide best RDS(on) Worldwide best FOM (figure of merit) Ultra

STI150N10F7, STP150N10F7 N-channel 100 V, 0.0036 typ., 110 A, STripFET F7 Power MOSFETs in I2PAK and TO-220 packages Datasheet - production data Features Order codes VDS RDS(on)max ID PTOT STI150N10F7 100 V 0.0042 110 A 250 W STP150N10F7 TAB TAB Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity 3 3

STP15N05L STP15N05LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP15N05L 50 V

STP15NK50Z/FP - STB15NK50Z STB15NK50Z-1 - STW15NK50Z N-channel 500V - 0.30 - 14A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-protected SuperMESH Power MOSFET General features Type VDSS RDS(on) ID Pw 3 STP15NK50Z 500V

STP15N06L STP15N06LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP15N06L 60 V

STP15810 N-channel 100 V, 0.0036 typ., 110 A, STripFET F7 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on)max ID PTOT TAB STP15810 100 V 0.0042 110 A 250 W 100% avalanche tested Ultra low on-resistance 3 2 1 TO-220 Applications Switching applications Description Figure 1. Internal schematic diagram This N-channe

STP15NK50Z/FP - STB15NK50Z STB15NK50Z-1 - STW15NK50Z N-channel 500V - 0.30 - 14A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-protected SuperMESH Power MOSFET General features Type VDSS RDS(on) ID Pw 3 STP15NK50Z 500V

STB15NM60ND - STF/I15NM60ND STP15NM60ND - STW15NM60ND N-channel 600 V - 0.27 - 14 A - FDmesh II Power MOSFET D2PAK, I2PAK, TO-220, TO-220FP, TO-247 Features Type VDSS (@Tjmax)RDS(on) max ID 3 3 STB15NM60ND 14 A 2 1 1 STF15NM60ND 14 A D2PAK I PAK STI15NM60ND 650 V 0.299 14 A(1) 3 2 1 STP15NM60ND 14 A STW15NM60ND 14 A TO-247 1. Limited only by maximum temperature

STB150NF55 STP150NF55 - STW150NF55 N-channel 55V - 0.005 - 120A - D2PAK/TO-220/TO-247 STripFET II Power MOSFET General features Type VDSS RDS(on) ID STB150NF55 55V

STP150NF04 N-channel 40 V, 0.005 typ., 80 A STripFET II Power MOSFET in a TO-220 package Datasheet production data Features RDS(on) Type VDSS ID TAB max STP150NF04 40 V

STB150NF04 STP150NF04 N-channel 40 V, 0.005 , 80 A, TO-220, D2PAK STripFET II Power MOSFET Features RDS(on) Type VDSS ID max STB150NF04 40 V

STF15N65M5, STFI15N65M5, STP15N65M5 N-channel 650 V, 0.308 typ., 11 A MDmesh V Power MOSFET in TO-220FP, I2PAKFP and TO-220 packages Datasheet production data Features VDS @ RDS(on) Order codes ID TJmax max 3 2 1 STF15N65M5 TO-220FP STFI15N65M5 710 V

STP15N06L STP15N06LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STP15N06L 60 V

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STP15NM65N FEATURES Typical R (on)=0.25 DS Low input capacitance and gate charge Low gate input resistances 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

isc N-Channel MOSFET Transistor STP150N10F7 FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL