SRC60R100BS Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: SRC60R100BS
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 255 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 42 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 28.4 ns
Cossⓘ - Выходная емкость: 69.4 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
Тип корпуса: PDFN8X8-4
- подбор MOSFET транзистора по параметрам
SRC60R100BS Datasheet (PDF)
src60r100bs.pdf

Datasheet100m, 600V, Super Junction N-Channel Power MOSFET SRC60R100BSGeneral Description SymbolThe Sanrise SRC60R100BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity
src60r100b.pdf

Datasheet100m, 600V, Super Junction N-Channel Power MOSFET SRC60R100BGeneral Description SymbolThe Sanrise SRC60R100B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity a
src60r108b.pdf

Datasheet 108m, 600V, Super Junction N-Channel Power MOSFET SRC60R108B General Description Symbol The Sanrise SRC60R108B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
src60r160fb.pdf

Datasheet 160m, 600V, Super Junction N-Channel Power MOSFET SRC60R160FB General Description Symbol The Sanrise SRC60R160FB is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
Другие MOSFET... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
History: IMW120R045M1 | RU1HL8L | KRF7703 | IXTH10N60 | UPA1770 | TSM4946DCS | 2SK557
History: IMW120R045M1 | RU1HL8L | KRF7703 | IXTH10N60 | UPA1770 | TSM4946DCS | 2SK557



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