SRC60R125B. Аналоги и основные параметры
Наименование производителя: SRC60R125B
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 178 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 26.2 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 11 ns
Cossⓘ - Выходная емкость: 88 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.125 Ohm
Тип корпуса: TO247 TO220 TO263
Аналог (замена) для SRC60R125B
- подборⓘ MOSFET транзистора по параметрам
SRC60R125B даташит
src60r125b.pdf
Datasheet 125m , 600V, Super Junction N-Channel Power MOSFET SRC60R125B General Description Symbol The Sanrise SRC60R125B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
src60r160fb.pdf
Datasheet 160m , 600V, Super Junction N-Channel Power MOSFET SRC60R160FB General Description Symbol The Sanrise SRC60R160FB is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
src60r100b.pdf
Datasheet 100m , 600V, Super Junction N-Channel Power MOSFET SRC60R100B General Description Symbol The Sanrise SRC60R100B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density a
src60r108b.pdf
Datasheet 108m , 600V, Super Junction N-Channel Power MOSFET SRC60R108B General Description Symbol The Sanrise SRC60R108B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
Другие MOSFET... SRC60R075BSD88 , SRC60R075FBS , SRC60R078B , SRC60R078BS , SRC60R090BS , SRC60R100B , SRC60R100BS , SRC60R108B , RFP50N06 , SRC60R145B , SRC60R145BS , SRC60R160BS , SRC60R160FB , SRC60R200 , SRC60R230B , SRC60R360 , SRC60R360B .
History: JVL102E | BSC097N06NST | APM2305AC
History: JVL102E | BSC097N06NST | APM2305AC
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