SRC60R125B
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SRC60R125B
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 178
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 5
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 26.2
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 57.3
nC
trⓘ -
Время нарастания: 11
ns
Cossⓘ - Выходная емкость: 88
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.125
Ohm
Тип корпуса:
TO247
TO220
TO263
Аналог (замена) для SRC60R125B
SRC60R125B
Datasheet (PDF)
..1. Size:1319K sanrise-tech
src60r125b.pdf Datasheet 125m, 600V, Super Junction N-Channel Power MOSFET SRC60R125B General Description Symbol The Sanrise SRC60R125B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
7.1. Size:1325K sanrise-tech
src60r160fb.pdf Datasheet 160m, 600V, Super Junction N-Channel Power MOSFET SRC60R160FB General Description Symbol The Sanrise SRC60R160FB is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
7.2. Size:1049K sanrise-tech
src60r100b.pdf Datasheet100m, 600V, Super Junction N-Channel Power MOSFET SRC60R100BGeneral Description SymbolThe Sanrise SRC60R100B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity a
7.3. Size:1623K sanrise-tech
src60r108b.pdf Datasheet 108m, 600V, Super Junction N-Channel Power MOSFET SRC60R108B General Description Symbol The Sanrise SRC60R108B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
7.4. Size:1155K sanrise-tech
src60r145b.pdf Datasheet 145m, 600V, Super Junction N-Channel Power MOSFET SRC60R145B General Description Symbol The Sanrise SRC60R145B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
7.5. Size:1051K sanrise-tech
src60r100bs.pdf Datasheet100m, 600V, Super Junction N-Channel Power MOSFET SRC60R100BSGeneral Description SymbolThe Sanrise SRC60R100BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity
7.6. Size:1572K sanrise-tech
src60r160bs.pdf Datasheet160m, 600V, Super Junction N-Channel Power MOSFET SRC60R160BSGeneral Description SymbolThe Sanrise SRC60R160BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity
7.7. Size:2173K sanrise-tech
src60r145bs.pdf Datasheet145m, 600V, Super Junction N-Channel Power MOSFET SRC60R145BSGeneral Description SymbolThe Sanrise SRC60R145BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity
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