SRC60R200
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: SRC60R200
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 86.8
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4.3
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 14
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 25.3
nC
trⓘ -
Время нарастания: 20
ns
Cossⓘ - Выходная емкость: 86.4
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.2
Ohm
Тип корпуса:
TO247
TO220
TO263
TO262
TO252
- подбор MOSFET транзистора по параметрам
SRC60R200
Datasheet (PDF)
..1. Size:877K sanrise-tech
src60r200.pdf 

Datasheet 200m, 600V, Super Junction N-Channel Power MOSFET SRC60R200 High Power AC/DC Power Supply General Description Symbol The Sanrise SRC60R200 is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applica
7.1. Size:1036K sanrise-tech
src60r230b.pdf 

Datasheet 230m, 600V, Super Junction N-Channel Power MOSFET SRC60R230B General Description Symbol The Sanrise SRC60R230B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
8.1. Size:1038K 1
src60r078b.pdf 

Datasheet 78m, 600V, Super Junction N-Channel Power MOSFET SRC60R078B General Description Symbol The Sanrise SRC60R078B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
8.2. Size:643K 1
src60r090b.pdf 

Datasheet 90m, 600V, Super Junction N-Channel Power MOSFET SRC60R090B General Description Symbol The Sanrise SRC60R090B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
8.3. Size:1325K sanrise-tech
src60r160fb.pdf 

Datasheet 160m, 600V, Super Junction N-Channel Power MOSFET SRC60R160FB General Description Symbol The Sanrise SRC60R160FB is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
8.4. Size:619K sanrise-tech
src60r075bs.pdf 

Preliminary Datasheet75m, 600V, Super Junction N-Channel Power MOSFET SRC60R075BSGeneral Description SymbolThe Sanrise SRC60R075BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior pow
8.5. Size:1266K sanrise-tech
src60r064s.pdf 

Preliminary Datasheet64m, 600V, Super Junction N-Channel Power MOSFET SRC60R064SGeneral Description SymbolThe Sanrise SRC60R064S is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior power
8.6. Size:1606K sanrise-tech
src60r030fbs.pdf 

Datasheet30m, 600V, Super Junction N-Channel Power MOSFET SRC60R030FBSGeneral DescriptionSymbolThe Sanrise SRC60R030FBS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensi
8.7. Size:1038K sanrise-tech
src60r078b.pdf 

Datasheet 78m, 600V, Super Junction N-Channel Power MOSFET SRC60R078B General Description Symbol The Sanrise SRC60R078B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
8.8. Size:1146K sanrise-tech
src60r075bsd88.pdf 

Datasheet75m, 600V, Super Junction N-Channel Power MOSFET SRC60R075BSGeneral Description SymbolThe Sanrise SRC60R075BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity
8.9. Size:1755K sanrise-tech
src60r068bs.pdf 

Datasheet68m, 600V, Super Junction N-Channel Power MOSFET SRC60R068BSGeneral Description SymbolThe Sanrise SRC60R068BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity
8.10. Size:1572K sanrise-tech
src60r075fbs.pdf 

Datasheet75m, 600V, Super Junction N-Channel Power MOSFET SRC60R075FBSGeneral Description SymbolThe Sanrise SRC60R075FBS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensit
8.11. Size:1049K sanrise-tech
src60r100b.pdf 

Datasheet100m, 600V, Super Junction N-Channel Power MOSFET SRC60R100BGeneral Description SymbolThe Sanrise SRC60R100B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity a
8.12. Size:1103K sanrise-tech
src60r068bstl.pdf 

Datasheet68m, 600V, Super Junction N-Channel Power MOSFET SRC60R068BSGeneral Description SymbolThe Sanrise SRC60R068BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity
8.13. Size:1422K sanrise-tech
src60r017fb.pdf 

Datasheet17m, 600V, Super Junction N-Channel Power MOSFET SRC60R017FBGeneral DescriptionSymbolThe Sanrise SRC60R017FB is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity
8.14. Size:909K sanrise-tech
src60r045fb.pdf 

Datasheet 45m 600V, Super Junction N-Channel Power MOSFET SRC60R045FB General Description Symbol The Sanrise SRC60R045FB is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
8.15. Size:1771K sanrise-tech
src60r090bs.pdf 

Datasheet90m, 600V, Super Junction N-Channel Power MOSFET SRC60R090BSGeneral Description SymbolThe Sanrise SRC60R090BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity
8.16. Size:1180K sanrise-tech
src60r037b.pdf 

Datasheet37m, 600V, Super Junction N-Channel Power MOSFET SRC60R037BGeneral Description SymbolThe Sanrise SRC60R037B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity an
8.17. Size:831K sanrise-tech
src60r360b.pdf 

Datasheet 360m, 600V, Super Junction N-Channel Power MOSFET SRC60R360B General Description Symbol The Sanrise SRC60R360B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
8.18. Size:583K sanrise-tech
src60r450b.pdf 

Datasheet 450m, 600V, Super Junction N-Channel Power MOSFET SRC60R450B General Description Symbol The Sanrise SRC60R450B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
8.19. Size:1623K sanrise-tech
src60r108b.pdf 

Datasheet 108m, 600V, Super Junction N-Channel Power MOSFET SRC60R108B General Description Symbol The Sanrise SRC60R108B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
8.20. Size:696K sanrise-tech
src60r030bs.pdf 

Datasheet 30m, 600V, Super Junction N-Channel Power MOSFET SRC60R030BS General Description Symbol The Sanrise SRC60R030BS is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
8.21. Size:1172K sanrise-tech
src60r022fbst4g.pdf 

Datasheet22m, 600V, Super Junction N-Channel Power MOSFET SRC60R022FBSGeneral Description SymbolThe Sanrise SRC60R022FBS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensit
8.22. Size:634K sanrise-tech
src60r360.pdf 

Datasheet 360m, 600V, Super Junction N-Channel Power MOSFET SRC60R360 General Description Symbol The Sanrise SRC60R360 is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power d
8.23. Size:1263K sanrise-tech
src60r022fbs.pdf 

Datasheet22m, 600V, Super Junction N-Channel Power MOSFET SRC60R022FBSGeneral Description SymbolThe Sanrise SRC60R022FBS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensit
8.24. Size:1155K sanrise-tech
src60r145b.pdf 

Datasheet 145m, 600V, Super Junction N-Channel Power MOSFET SRC60R145B General Description Symbol The Sanrise SRC60R145B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
8.25. Size:1904K sanrise-tech
src60r029fbs.pdf 

Datasheet29m, 600V, Super Junction N-Channel Power MOSFET SRC60R029FBSGeneral Description SymbolThe Sanrise SRC60R029FBS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensit
8.26. Size:630K sanrise-tech
src60r420.pdf 

Datasheet 420m, 600V, Super Junction N-Channel Power MOSFET SRC60R420 General Description Symbol The Sanrise SRC60R420 is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power d
8.27. Size:1326K sanrise-tech
src60r017fbt4g.pdf 

Datasheet17m, 600V, Super Junction N-Channel Power MOSFET SRC60R017FBGeneral Description SymbolThe Sanrise SRC60R017FB is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity
8.28. Size:1771K sanrise-tech
src60r078bs.pdf 

Datasheet78m, 600V, Super Junction N-Channel Power MOSFET SRC60R078BSGeneral Description SymbolThe Sanrise SRC60R078BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity
8.29. Size:791K sanrise-tech
src60r680e.pdf 

Datasheet 680m, 600V, Super Junction N-Channel Power MOSFET SRC60R680E General Description Symbol The Sanrise SRC60R680E is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
8.30. Size:1051K sanrise-tech
src60r100bs.pdf 

Datasheet100m, 600V, Super Junction N-Channel Power MOSFET SRC60R100BSGeneral Description SymbolThe Sanrise SRC60R100BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity
8.31. Size:1319K sanrise-tech
src60r125b.pdf 

Datasheet 125m, 600V, Super Junction N-Channel Power MOSFET SRC60R125B General Description Symbol The Sanrise SRC60R125B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
8.32. Size:1572K sanrise-tech
src60r160bs.pdf 

Datasheet160m, 600V, Super Junction N-Channel Power MOSFET SRC60R160BSGeneral Description SymbolThe Sanrise SRC60R160BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity
8.33. Size:2173K sanrise-tech
src60r145bs.pdf 

Datasheet145m, 600V, Super Junction N-Channel Power MOSFET SRC60R145BSGeneral Description SymbolThe Sanrise SRC60R145BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity
8.34. Size:566K sanrise-tech
src60r950e.pdf 

Datasheet 950m, 600V, Super Junction N-Channel Power MOSFET SRC60R950E General Description Symbol The Sanrise SRC60R950E is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
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History: CS3N90P
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| 2SJ605-S
| IRHY67434CM