SRC65R032FB - описание и поиск аналогов

Datasheet 32m , 650V, Super Junction N-Channel Power MOSFET SRC65R032FB General Description Symbol The Sanrise SRC65R032FB is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density

Datasheet 52m 650V, Super Junction N-Channel Power MOSFET SRC65R052FB General Description Symbol The Sanrise SRC65R052FB is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

Datasheet 40m , 650V, Super Junction N-Channel Power MOSFET SRC65R040B General Description Symbol The Sanrise SRC65R040B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density an

Datasheet 85m , 650V, Super Junction N-Channel Power MOSFET SRC65R085BS General Description Symbol The Sanrise SRC65R085BS is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density

Datasheet 82m , 650V, Super Junction N-Channel Power MOSFET SRC65R082B General Description Symbol The Sanrise SRC65R082B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density an

Datasheet 72m , 650V, Super Junction N-Channel Power MOSFET SRC65R072B General Description Symbol The Sanrise SRC65R072B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density an

Datasheet 42m , 650V, Super Junction N-Channel Power MOSFET SRC65R042B General Description Symbol The Sanrise SRC65R042B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density an

Datasheet 24m , 650V, Super Junction N-Channel Power MOSFET SRC65R024B General Description Symbol The Sanrise SRC65R024B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density an

Datasheet 85m , 650V, Super Junction N-Channel Power MOSFET SRC65R085B General Description Symbol The Sanrise SRC65R085B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

Datasheet 68m , 650V, Super Junction N-Channel Power MOSFET SRC65R068BS General Description Symbol The Sanrise SRC65R068BS is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density

Datasheet 68m , 650V, Super Junction N-Channel Power MOSFET SRC65R068BS General Description Symbol The Sanrise SRC65R068BS is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density