SRC65R110B. Аналоги и основные параметры
Наименование производителя: SRC65R110B
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 291 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 36.9 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 38 ns
Cossⓘ - Выходная емкость: 136 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.11 Ohm
Тип корпуса: PDFN8X8-4
Аналог (замена) для SRC65R110B
- подборⓘ MOSFET транзистора по параметрам
SRC65R110B даташит
src65r110b.pdf
Datasheet 110m , 650V, Super Junction N-Channel Power MOSFET SRC65R110B General Description Symbol The Sanrise SRC65R110B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
src65r110bs.pdf
Datasheet 110m , 650V, Super Junction N-Channel Power MOSFET SRC65R110BS General Description Symbol The Sanrise SRC65R110BS is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density
src65r145b.pdf
Datasheet 145m , 650V, Super Junction N-Channel Power MOSFET SRC65R145B General Description Symbol The Sanrise SRC65R145B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density a
src65r1k3es.pdf
Datasheet 1.3 , 650V, Super Junction N-Channel Power MOSFET SRC65R1K3ES General Description Symbol The Sanrise SRC65R1K3ES is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
Другие MOSFET... SRC65R068BS , SRC65R068BSTL , SRC65R072B , SRC65R082B , SRC65R085B , SRC65R085BS , SRC65R100B , SRC65R100BS , EMB04N03H , SRC65R110BS , SRC65R145B , SRC65R170B , SRC65R180 , SRC65R1K3ES , SRC65R220 , SRC65R220BS , SRC65R220M2 .
History: FDS8949F085 | SWP340R10VT | IXFE80N50
History: FDS8949F085 | SWP340R10VT | IXFE80N50
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