SRC65R110B Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: SRC65R110B
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 291 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 36.9 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 38 ns
Cossⓘ - Выходная емкость: 136 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.11 Ohm
Тип корпуса: PDFN8X8-4
- подбор MOSFET транзистора по параметрам
SRC65R110B Datasheet (PDF)
src65r110b.pdf

Datasheet 110m, 650V, Super Junction N-Channel Power MOSFET SRC65R110B General Description Symbol The Sanrise SRC65R110B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
src65r110bs.pdf

Datasheet110m, 650V, Super Junction N-Channel Power MOSFET SRC65R110BSGeneral Description SymbolThe Sanrise SRC65R110BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity
src65r145b.pdf

Datasheet145m, 650V, Super Junction N-Channel Power MOSFET SRC65R145BGeneral Description SymbolThe Sanrise SRC65R145B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity a
src65r1k3es.pdf

Datasheet 1.3, 650V, Super Junction N-Channel Power MOSFET SRC65R1K3ES General Description Symbol The Sanrise SRC65R1K3ES is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: TK25E60X | 12N65KL-TF1-T | IRHNJ57234SE | MSE20N06N | LNG5N50 | FDPF15N65YDTU | IRLU230A
History: TK25E60X | 12N65KL-TF1-T | IRHNJ57234SE | MSE20N06N | LNG5N50 | FDPF15N65YDTU | IRLU230A



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